X-On Electronics has gained recognition as a prominent supplier of SGH15N60RUFDTU IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. SGH15N60RUFDTU IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

SGH15N60RUFDTU ON Semiconductor

SGH15N60RUFDTU electronic component of ON Semiconductor
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Part No.SGH15N60RUFDTU
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors Dis Short Circuit Rated IGBT
Datasheet: SGH15N60RUFDTU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 1.5452 ea
Line Total: USD 15.45 
Availability - 0
MOQ: 10  Multiples: 30
Pack Size: 30
Availability Price Quantity
0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 10
Multiples : 30
10 : USD 1.5452

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
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We are delighted to provide the SGH15N60RUFDTU from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SGH15N60RUFDTU and other electronic components in the IGBT Transistors category and beyond.

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SGH15N60RUFD IGBT SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild s RUFD series of Insulated Gate Bipolar Short circuit rated 10us T = 100C, V = 15V C GE Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage : V = 2.2 V I = 15A CE(sat) C series is designed for applications such as motor control, High input impedance uninterrupted power supplies (UPS) and general inverters CO-PAK, IGBT with FRD : t = 42ns (typ.) rr where short circuit ruggedness is a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. CC GG TO-3P EE G C E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description SGH15N60RUFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage 20 V GES Collector Current T = 25C24 A C I C Collector Current T = 100C15 A C I Pulsed Collector Current 45 A CM (1) I Diode Continuous Forward Current T = 100C15 A F C I Diode Maximum Forward Current 160 A FM T Short Circuit Withstand Time T = 100C10 us SC C P Maximum Power Dissipation T = 25C 160 W D C Maximum Power Dissipation T = 100C64 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for Soldering T 300 C L Purposes, 1/8 from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.77 C/W JC R (DIODE) Thermal Resistance, Junction-to-Case -- 0.7 C/W JC R Thermal Resistance, Junction-to-Ambient -- 40 C/W JA 2002 Fairchild Semiconductor Corporation SGH15N60RUFD Rev. A1SGH15N60RUFD Electrical Characteristics of the IGBT T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage V = 0V, I = 250uA 600 -- -- V CES GE C B / Temperature Coefficient of Breakdown VCES V = 0V, I = 1mA -- 0.6 -- V/C GE C T Voltage J I Collector Cut-Off Current V = V , V = 0V -- -- 250 uA CES CE CES GE I G-E Leakage Current V = V , V = 0V -- -- 100 nA GES GE GES CE On Characteristics V G-E Threshold Voltage I = 15mA, V = V 5.0 6.0 8.5 V GE(th) C CE GE I = 15A, V = 15V -- 2.2 2.8 V Collector to Emitter C GE V CE(sat) Saturation Voltage I = 24A, V = 15V -- 2.5 -- V C GE Dynamic Characteristics C Input Capacitance -- 948 -- pF ies V = 30V V = 0V, CE , GE C Output Capacitance -- 101 -- pF oes f = 1MHz C Reverse Transfer Capacitance -- 33 -- pF res Switching Characteristics t Turn-On Delay Time -- 17 -- ns d(on) t Rise Time -- 33 -- ns r t Turn-Off Delay Time -- 44 65 nS V = 300 V, I = 15A, d(off) CC C t Fall Time R = 13 , V = 15V, -- 118 200 ns f G GE Inductive Load, T = 25C E Turn-On Switching Loss -- 320 -- uJ C on E Turn-Off Switching Loss -- 356 -- uJ off E Total Switching Loss -- 676 950 uJ ts t Turn-On Delay Time -- 20 -- ns d(on) t Rise Time -- 34 -- ns r t Turn-Off Delay Time -- 48 70 ns V = 300 V, I = 15A, d(off) CC C t Fall Time R = 13 , V = 15V, -- 212 350 ns f G GE Inductive Load, T = 125C E Turn-On Switching Loss -- 340 -- uJ C on E Turn-Off Switching Loss -- 695 -- uJ off E Total Switching Loss -- 10351450 uJ ts V = 300 V, V = 15V CC GE T Short Circuit Withstand Time 10 -- -- us sc T = 100C C Q Total Gate Charge -- 42 60 nC g V = 300 V, I = 15A, CE C Q Gate-Emitter Charge -- 7 10 nC ge V = 15V GE Q Gate-Collector Charge -- 17 24 nC gc L Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH e Electrical Characteristics of DIODE T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Units T = 25C -- 1.4 1.7 C V Diode Forward Voltage I = 15A V FM F T = 100C -- 1.3 -- C T = 25C -- 42 60 C t Diode Reverse Recovery Time ns rr T = 100C -- 60 -- C T = 25C -- 3.5 6.0 Diode Peak Reverse Recovery I = 15A, C F I A rr Current di/dt = 200 A/us T = 100C -- 5.6 -- C T = 25C -- 80 180 C Q Diode Reverse Recovery Charge nC rr T = 100C -- 220 -- C 2002 Fairchild Semiconductor Corporation SGH15N60RUFD Rev. A1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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