NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, NChannel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses NGD8205N, NGD8205AN UNCLAMPED COLLECTOR TOEMITTER AVALANCHE CHARACTERISTICS (55 T 175C) J Characteristic Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy E mJ AS V = 50 V, V = 5.0 V, Pk I = 16.7 A, R = 1000 , L = 1.8 mH, Starting T = 25C 250 CC GE L G J V = 50 V, V = 5.0 V, Pk I = 14.9 A, R = 1000 , L = 1.8 mH, Starting T = 150C 200 CC GE L G J V = 50 V, V = 5.0 V, Pk I = 14.1 A, R = 1000 , L = 1.8 mH, Starting T = 175C 180 CC GE L G J Reverse Avalanche Energy E mJ AS(R) V = 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25C 2000 CC GE L J THERMAL CHARACTERISTICS Thermal Resistance, Junction toCase R 1.2 C/W JC Thermal Resistance, JunctiontoAmbient (Note 1) R 95 C/W JA Maximum Temperature for Soldering Purposes, 1/8 from case for 5 seconds (Note 2) T 275 C L 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Clamp Voltage BV I = 2.0 mA T = 40C to 175C 325 350 375 V CES C J I = 10 mA T = 40C to 175C 340 365 390 C J Zero Gate Voltage Collector Current I V = 0 V, CES GE T = 25C 0.1 1.0 A J V = 15 V CE T = 25C 0.5 1.5 10 A J V = 175 V, CE T = 175C 1.0 25 100* J V = 0 V GE T = 40C 0.4 0.8 5.0 J Reverse Collector Emitter Clamp Voltage B T = 25C 30 35 39 V VCES(R) J T = 175C 35 39 45* I = 75 mA J C T = 40C 30 33 37 J Reverse Collector Emitter Leakage Current I T = 25C 0.05 0.25 0.5 mA CES(R) J V = 24 V CE T = 175C 1.0 12.5 25 J NGD8205 T = 40C 0.005 0.03 0.25 J T = 25C 0.05 0.25 1.0 J V = 24 V CE T = 175C 1.0 12.5 25 J NGD8205A T = 40C 0.03 0.25 J GateEmitter Clamp Voltage BV I = 5.0 mA T = 40C to 175C 12 12.5 14 V GES G J GateEmitter Leakage Current I V = 5.0 V T = 40C to 175C 200 300 350* A GES GE J Gate Resistor (Optional) R T = 40C to 175C 70 G J GateEmitter Resistor R T = 40C to 175C 14.25 16 25 k GE J ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V T = 25C 1.5 1.8 2.1 V GE(th) J I = 1.0 mA, C T = 175C 0.7 1.0 1.3 J V = V GE CE T = 40C 1.7 2.0 2.3* J Threshold Temperature Coefficient 3.8 4.6 6.0 mV/C (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width 300 S, Duty Cycle 2%.