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This literature is subject to all applicable copyright laws and is not for resale in any manner.SGH30N60RUFD IGBT SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild s RUFD series of Insulated Gate Bipolar Short circuit rated 10us T = 100C, V = 15V C GE Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage : V = 2.2 V I = 30A CE(sat) C series is designed for applications such as motor control, High input impedance uninterrupted power supplies (UPS) and general inverters CO-PAK, IGBT with FRD : t = 50ns (typ.) rr where short circuit ruggedness is a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. CC GG EE TO-3PN G C E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description SGH30N60RUFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage 20 V GES Collector Current T = 25C48 A C I C Collector Current T = 100C30 A C I Pulsed Collector Current 90 A CM (1) I Diode Continuous Forward Current T = 100C25 A F C I Diode Maximum Forward Current 220 A FM T Short Circuit Withstand Time T =100C10 us SC C P Maximum Power Dissipation T = 25C 235 W D C Maximum Power Dissipation T = 100C90 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for Soldering T 300 C L Purposes, 1/8 from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.53 C/W JC R (DIODE) Thermal Resistance, Junction-to-Case -- 0.83 C/W JC R Thermal Resistance, Junction-to-Ambient -- 40 C/W JA 2002 Fairchild Semiconductor Corporation SGH30N60RUFD Rev. B1