NGB8206N, NGB8206AN Ignition IGBT 2 20 A, 350 V, NChannel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses NGB8206N, NGB8206AN UNCLAMPED COLLECTOR TOEMITTER AVALANCHE CHARACTERISTICS (55 T 175C) J Characteristic Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy E mJ AS 250 V = 50 V, V = 5.0 V, Pk I = 16.7 A, L = 1.8 mH, R = 1 k Starting T = 25C CC GE L g J 200 V = 50 V, V = 5.0 V, Pk I = 14.9 A, L = 1.8 mH, R = 1 k Starting T = 150C CC GE L g J 180 V = 50 V, V = 5.0 V, Pk I = 14.1 A, L = 1.8 mH, R = 1 k Starting T = 175C CC GE L g J Reverse Avalanche Energy E mJ AS(R) V = 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25C 2000 CC GE L J THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoCase R 1.0 C/W JC Thermal Resistance, JunctiontoAmbient (Note 1) 62.5 C/W R JA Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 2) T 275 C L 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Clamp Voltage BV I = 2.0 mA T = 40C to 175C 325 350 375 V CES C J I = 10 mA T = 40C to 175C 340 365 390 C J Zero Gate Voltage Collector Current I V = 15 V, A CES CE T = 25C 0.1 1.0 J V = 0 V GE T = 25C 0.5 1.5 10 J V = 175 V, CE T = 175C 1.0 25 100* J V = 0 V GE T = 40C 0.4 0.8 5.0 J Reverse CollectorEmitter Clamp B T = 25C 30 35 39 V VCES(R) J Voltage I = 75 mA C T = 175C 35 39 45* J NGB8206 T = 40C 30 33 37 J T = 25C 30 35 39 J I = 75 mA C T = 175C 32 37 42 J NGB8206A T = 40C 29 32 37 J Reverse CollectorEmitter Leakage Cur- I T = 25C 0.05 0.25 0.5 mA CES(R) J rent V = 24 V CE T = 175C 1.0 12.5 25 J NGB8206 T = 40C 0.005 0.03 0.25 J T = 25C 0.05 0.25 1.0 J V = 24 V CE T = 175C 1.0 12.5 25 J NGB8206A T = 40C 0.005 0.03 0.25 J GateEmitter Clamp Voltage BV I = 5.0 mA T = 40C to 175C 12 12.5 14 V GES G J GateEmitter Leakage Current I V = 5.0 V T = 40C to 175C 200 300 350* A GES GE J Gate Resistor R T = 40C to 175C 70 G J GateEmitter Resistor R T = 40C to 175C 14.25 16 25 k GE J ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V T = 25C 1.5 1.8 2.1 V GE(th) J I = 1.0 mA, C T = 175C 0.7 1.0 1.3 J V = V GE CE T = 40C 1.7 2.0 2.3* J *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width 300 S, Duty Cycle 2%.