Ignition IGBT Surface Mount > 365V > NGB8207ABN Pb NGB8207ABN - 20 A, 365 V, N-Channel Ignition IGBT, Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for CoilonPlug and DriveronCoil Applications GateEmitter ESD Protection Temperature Compensated GateCollector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection 20 Amps, 365 Volts Low Threshold Voltage for Interfacing Power Loads to V (on) 1.5 V CE Logic or Microprocessor Devices I = 10A, V 4.5 V C GE Low Saturation Voltage High Pulsed Current Capability Maximum Ratings and Thermal Characteristics Minimum Avalanche Energy 500 mJ (T = 25C unless otherwise noted) J Gate Resistor (R ) = 70 G Rating Symbol Value Unit These are PbFree Devices CollectorEmitter Voltage V 365 V CES Applications GateEmitter Voltage V 15 V GE Ignition Systems Collector CurrentContinuous 20 A DC I C T = 25C Pulsed 50 A C AC Functional Diagram Continuous Gate Current I 1.0 mA G Transient Gate Current I 20 mA G (t 2 ms, f 100 Hz) ESD (ChargedDevice Model) ESD 2.0 kV ESD (Human Body Model) ESD 8.0 kV R = 1500 , C = 100 pF ESD (Machine Model) ESD 500 V R = 0 , C = 200 pF Additional Information 165 Watts Total Power Dissipation T = 25C C P D Derate above 25C 1.1 W/C Operating and Storage 55 to T , T C J stg Temperature Range +175 Samples Datasheet Resources Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18Ignition IGBT Surface Mount > 365V > NGB8207ABN Unclamped CollectorToEmitter Avalanche Characteristics (55 T 175C) J Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy V = 50 V, V = 10 V, P IL = 16.5 A, L = 3.7 mH, Rg = 1 k Starting T = 25C 500 CC GE k J E mJ AS 306 V = 50 V, V = 10 V, P I = 10 A, L = 6.1 mH, Rg = 1 k Starting T = 125C CC GE k L J Reverse Avalanche Energy V = 100 V, V = 20 V, P I = 25.8 A, L = 6.0 mH, Starting T = 25C E 2000 mJ AS(R) CC GE k L J Thermal Characteristics Symbol Value Unit Thermal Resistance, Junction to Case R 0.9 C/W JC Thermal Resistance, Junction to Ambient (Note 2) C/W R 50 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 275 C L 5 seconds 2. When surface mounted to an FR4 board using the minimum recommended pad size. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18