Ignition IGBT Surface Mount > 410V > NGx15N41 Pb NGD15N41ACL, NGB15N41ACL, NGP15N41ACL - 15 A, 410 V, N-Channel Ignition IGBT, DPAK, D2PAK and TO-220 Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for CoilonPlug Applications DPAK Package Offers Smaller Footprint and Increased Board Space GateEmitter ESD Protection Temperature Compensated GateCollector Voltage Clamp 15 Amps, 410 Volts Limits Stress Applied to Load VCE(on) 2.1 V Integrated ESD Diode Protection IC = 10 A, VGE 4.5 V New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Maximum Ratings (T = 25C unless otherwise noted) Low Threshold Voltage to Interface Power Loads to Logic J or Microprocessor Devices Rating Symbol Value Unit Low Saturation Voltage V DC CollectorEmitter Voltage V 440 CES High Pulsed Current Capability and GateEmitter Optional Gate Resistor (R G) Resistor (R ) CollectorGate Voltage V 440 V GE CER DC These are PbFree Devices GateEmitter Voltage V 15 V GE DC Functional Diagram 15 A Collector CurrentContinuous DC C I C T = 25C Pulsed A 50 C AC ESD (Human Body Model) ESD 8.0 kV G R G R = 1500 , C = 100 pF R GE ESD (Machine Model) ESD 800 V R = 0 , C = 200 pF E Total Power Dissipation T = 25C 107 W C P D Derate above 25C 0.71 W/C Additional Information 55 Operating and Storage T , T to C J stg Temperature Range +175 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are Samples Datasheet Resources stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Condi- tions may affect device reliability. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18Ignition IGBT Surface Mount > 410V > NGx15N41 Unclamped CollectorToEmitter Avalanche Characteristics (55 T 175C) J Rating Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy V = 50 V, V = 5.0 V, P I = 16.6 A, L = 1.8 mH, Starting T = 25C mJ E 250 CC GE k L C AS V = 50 V, V = 5.0 V, P I = 15 A, L = 1.8 mH, Starting T = 125C 200 CC GE k L C Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case 1.4 R JC DPAK (Note 1) 100 C/W 2 Thermal Resistance, Junction to Ambient (Note 1) D PAK (Note 1) 50 R JA TO220 62.5 Maximum Lead Temperature for Soldering Purposes, 275 T C L 1/8 from case for 5 seconds Electrical Characteristics - OFF Test Characteristic Symbol Temperature Min Typ Max Unit Conditions T = 40C J I = 2.0 mA 380 410 440 C to 150C CollectorEmitter B V VCES DC Clamp Voltage T = 40C J I = 10 mA 380 410 440 C to 150C T = 25C 2.0 20 J V = 350 V Zero Gate Voltage CE T = 150C 10 40* A I J DC CES Collector Current V = 0 V GE T = 40C 1.0 10 J T = 25C 0.7 2.0 J Reverse CollectorEmitter V = 24 V T = 150C 12 25* mA I J CE CES Leakage Current T = 40C 0.1 1.0 J T = 25C 27 33 37 J Reverse CollectorEmitter I = -75 mA T = 150C 30 36 40 V B J C DC VCES(R) Leakage Current T = 40C 25 31 35 J T = 40C J GateEmitter Clamp Voltage I = 5.0 mA 11 13 15 V BV G DC to 150C GES T = 40C J V = 10 V 384 640 1000 A GateEmitter Leakage Current I GE DC GES to 150C T = 40C J Gate Resistor 70 R G to 150C T = 40C J GateEmitter Resistor R 10 16 26 k to 150C GE T = 40C J 14.25 16 25 k Gate Emitter Resistor R GE to 150C 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18