NGTB05N60R2DT4G IGBT www.onsemi.com 600V, 8A, N-Channel Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT V (sat)=1.65V (typ) I =5A, V =15V 2,4 CE C GE IGBT t =95ns (typ) f Diode V =1.5V (typ) I =5A F F Diode t =70ns (typ) rr 5 s Short Circuit Capability 1 1:Gate 2:Collector Applications 3:Emitter 3 4:Collector General Purpose Inverter 4 Specifications DPAK Absolute Maximum Ratings at Ta=25C, Unless otherwise specified CASE 369C 2 1 Parameter Symbol Value Unit 3 V Collector to Emitter Voltage V 600 CES Gate to Emitter Voltage V 20 V GES 2 Marking Diagram A Collector Current (DC) Tc=25C * 16 1 I C * 2 A Limited by Tjmax Tc=100C * 8 Collector Current (Peak) A I 20 CP Pulse width Llimited by Tjmax I 8A Diode Average Output Current O Power Dissipation P 56 W D 2 Tc=25 C (Our ideal heat dissipation condition) * Tj 175 C Junction Temperature Tstg 55 to +175 C Storage Temperature Note : *1 Collector Current is calculated from the following formula. Tjmax - Tc I (Tc)= C R (j-c)V (sat) (I (Tc)) th CE C *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : January 2015 - Rev. 2 NGTB05N60R2DT4G/D NGTB05N60R2DT4G Electrical Characteristics at Ta=25C, Unless otherwise specified Value Parameter Symbol Conditions Unit min typ max Collector to Emitter Breakdown Voltage V( ) I =1mA, V=0V 600 V BR CES C GE Tc=25 C 10 A Collector to Emitter Cut off Current I V =600V, V =0V CES CE GE Tc=150C 1mA Gate to Emitter Leakage Current I V =20V, V=0V 100 nA GES GE CE Gate to Emitter Threshold Voltage V(th) V =20V, I =80A 4.5 7.0V GE CE C Tc=25 C 1.65 2.0 V Collector to Emitter Saturation Voltage V () V =15V, I =5A CE sat GE C Tc=100C 1.85 2.2 V Forward Diode Voltage V I=5A 1.5 2.1V F F Input Capacitance Cies 740 pF Output Capacitance Coes V =20V, f=1MHz 30 pF CE Reverse Transfer Capacitance Cres 20 pF Turn-ON Delay Time t (on) 44 ns d Rise Time t 26 ns r V =300V, I =5A CC C Turn-ON Time ton 139 ns R =30, L=500 H G Turn-OFF Delay Time t(off) 82 ns d V =0V/15V GE Fall Time Vclamp=400V t 95 ns f Tc=25 C Turn-OFF Time toff 186 ns See Fig.1, See Fig.2 Turn-ON Energy Eon 188 J Turn-OFF Energy Eoff 60 J Total Gate Charge Qg 30 nC Gate to Emitter Charge Qge V =300V, V =15V, I =5A 6 nC CE GE C Gate to Collector Miller Charge Qgc 14 nC Diode Reverse Recovery Time t I =5A,di/dt=300A/ s, V =300V, See Fig.3 70 ns rr F CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thermal Characteristics at Ta=25C, Unless otherwise specified Parameter Symbol Conditions Value Unit Tc=25 C Thermal Resistance IGBT (Junction to Case) Rth(j-c) (IGBT) 2.7 C/W 2 (Our ideal heat dissipation condition) * Thermal Resistance (Junction to Ambient) Rth(j-a) 100 C/W Note : *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. www.onsemi.com 2