NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is NGTB15N120IHWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase R 0.54 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 15 A V 2.10 2.45 V GE C CEsat V = 15 V, I = 15 A, T = 175C 2.30 GE C J Gateemitter threshold voltage V 4.5 5.5 6.5 V V = V , I = 250 A GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 150C 2.0 GE CE J = Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 2615 pF ies Output capacitance C 65 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 50 res Gate charge total Q 120 nC g Gate to emitter charge Q 24 V = 600 V, I = 15 A, V = 15 V ge CE C GE Gate to collector charge Q 56 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time t 130 ns d(off) T = 25C J V = 600 V, I = 15 A CC C Fall time t 185 f R = 10 g V = 0 V/ 15V Turnoff switching loss E 0.36 mJ GE off ns Turnoff delay time t 145 d(off) T = 150C J V = 600 V, I = 15 A CC C Fall time t 240 f R = 10 g V = 0 V/ 15V Turnoff switching loss E 0.65 mJ GE off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 15 A V 2.0 2.7 V GE F F V = 0 V, I = 20 A, T = 175C 3.3 GE F J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.