NGTB15N60EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching www.onsemi.com applications. Incorporated into the device is a rugged copackaged reverse recovery diode with a low forward voltage. 15 A, 600 V Features V = 1.7 V CEsat Low Saturation Voltage Resulting in Low Conduction Loss Low Switching Loss in Higher Frequency Applications C Soft Fast Reverse Recovery Diode 10 s Short Circuit Capability Excellent Current versus Package Size Performance Density G This is a PbFree Device Typical Applications E White Goods Appliance Motor Control General Purpose Inverter AC and DC Motor Control C ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 600 V TO220 CES CASE 221A Collector current I A C G STYLE 9 TC = 25C 30 C E TC = 100C 15 Pulsed collector current, T limited by I 120 A pulse CM MARKING DIAGRAM T Jmax Diode forward current I A F TC = 25C 30 TC = 100C 15 Diode pulsed current, T limited by I 120 A pulse FM T Jmax 15N60G Gateemitter voltage V 20 V GE AYWW Power dissipation P W D TC = 25C 117 TC = 100C 47 Short circuit withstand time t 10 s SC V = 15 V, V = 400 V, T +150C GE CE J A = Assembly Location Operating junction temperature range T 55 to C J Y = Year +150 WW = Work Week Storage temperature range T 55 to C stg G = PbFree Package +150 Lead temperature for soldering, 1/8 from T 260 C SLD case for 5 seconds ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NGTB15N60EG TO220 50 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 8 NGTB15N60E/DNGTB15N60EG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction to case, for IGBT R 1.06 C/W JC Thermal resistance junction to case, for Diode R 3.76 C/W JC Thermal resistance junction to ambient R 60 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V , I = 15 A V 1.45 1.7 1.95 V GE C CEsat V = 15 V , I = 15 A, T = 150C 1.8 2.1 2.4 GE C J Gateemitter threshold voltage V = V , I = 250 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gateemitter V = 0 V, V = 600 V I 10 A GE CE CES shortcircuited V = 0 V, V = 600 V, T = 150C 200 GE CE J Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES shortcircuited Forward Transconductance V = 20 V, I = 15 A g 10.1 S CE C fs DYNAMIC CHARACTERISTIC Input capacitance C 2600 ies Output capacitance C 64 V = 20 V, V = 0 V, f = 1 MHz pF oes CE GE Reverse transfer capacitance C 42 res Gate charge total Q 80 g Gate to emitter charge Q 24 V = 480 V, I = 15 A, V = 15 V nC ge CE C GE Gate to collector charge 33 Q gc SWITCHING CHARACTERISTIC , INDUCTIVE LOAD Turnon delay time t 78 d(on) Rise time t 30 r ns Turnoff delay time t 130 d(off) T = 25C J V = 400 V, I = 15 A CC C Fall time t 120 f R = 22 g V = 0 V / 15 V Turnon switching loss GE E 0.900 on Turnoff switching loss E 0.300 mJ off Total switching loss E 1.200 ts Turnon delay time t 76 d(on) Rise time t 33 r ns Turnoff delay time t 133 d(off) T = 150C J V = 400 V, I = 15 A CC C Fall time t 223 f R = 22 g V = 0 V / 15 V Turnon switching loss E 1.10 GE on Turnoff switching loss 0.510 E mJ off Total switching loss E 1.610 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 15 A V 1.6 1.85 V GE F F V = 0 V, I = 15 A, T = 150C 1.6 GE F J www.onsemi.com 2