NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com copackaged free wheeling diode with a low forward voltage. Features 45 A, 600 V Low Switching Loss Reduces System Power Dissipation V = 2.0 V CEsat T = 175C Jmax E = 0.36 mJ off Soft, Fast Free Wheeling Diode This is a PbFree Device C Typical Applications Welding G ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit E Collectoremitter voltage V 600 V CES Collector current I A C TC = 25C 90 TC = 100C 45 Pulsed collector current, T I 180 A pulse CM limited by T Jmax G TO247 Diode forward current I A F C CASE 340AL TC = 25C 90 E TC = 100C 45 Diode pulsed current, T limited I 180 A pulse FM by T Jmax MARKING DIAGRAM Gateemitter voltage V 20 V GE Transient Gate Emitter Voltage 30 (t = 5 s, D < 0.010) p Power Dissipation P W D TC = 25C 300 TC = 100C 150 45N60S2 Operating junction temperature T 55 to +175 C J AYWWG range Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping NGTB45N60S2WG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2014 Rev. 1 NGTB45N60S2W/DNGTB45N60S2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.50 C/W JC Thermal resistance junctiontocase, for Diode R 1.46 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 45 A V 2.0 2.3 V GE C CEsat V = 15 V, I = 45 A, T = 175C 2.5 GE C J Gateemitter threshold voltage V = V , I = 150 A V 4.5 5.5 6.5 V GE(th) GE CE C Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.2 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 175C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 3200 pF ies Output capacitance C 130 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 85 res Gate charge total Q 135 nC g Gate to emitter charge Q 27 V = 480 V, I = 45 A, V = 15 V ge CE C GE Gate to collector charge Q 67 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time t 151 ns d(off) T = 25C J V = 400 V, I = 45 A CC C Fall time t 55 f R = 10 g V = 0 V/ 15 V Turnoff switching loss GE E 0.36 mJ off Turnoff delay time t 154 ns d(off) T = 150C J V = 400 V, I = 45 A CC C Fall time t 78 f R = 10 g V = 0 V/ 15 V Turnoff switching loss GE E 0.69 mJ off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 45 A V 1.2 1.4 V GE F F V = 0 V, I = 45 A, T = 175C 1.2 GE F J Reverse recovery time t 498 ns rr T = 25C J Reverse recovery charge I = 45 A, V = 200 V Q 9400 nc F R rr di /dt = 200 A/ s F Reverse recovery current I 36 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2