DATA SHEET www.onsemi.com IGBT - Field Stop II 60 A, 650 V V = 1.64 V CEsat NGTB60N65FL2WG E = 0.66 mJ off This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides C superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features Extremely Efficient Trench with Field Stop Technology G T = 175C Jmax Soft Fast Reverse Recovery Diode E Optimized for High Speed Switching 5 s ShortCircuit Capability These are PbFree Devices Typical Applications Solar Inverters G Uninterruptible Power Supplies (UPS) C E Welding TO247 CASE 340AM ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAM Collectoremitter Voltage V 650 V CES Collector Current I A C T = 25C 100 C T = 100C 60 C Diode Forward Current I A F 60N65FL2 T = 25C 100 C AYWWG T = 100C 60 C Diode Pulsed Current I 240 A FM T Limited by T Max PULSE J Pulsed Collector Current, T I 240 A pulse CM Limited by T Jmax Shortcircuit Withstand Time t 5 s SC 60N65FL2 = Specific Device Code V = 15 V, V = 400 V, GE CE A = Assembly Location T +150C J Y = Year Gateemitter Voltage V 20 V WW = Work Week GE G = PbFree Package Transient Gateemitter Voltage 30 (T = 5 s, D < 0.10) PULSE Power Dissipation P W D ORDERING INFORMATION T = 25C 595 C T = 100C 265 C Device Package Shipping Operating Junction Temperature T 55 to +175 C J NGTB60N65FL2WG TO247 30 Units / Rail Range (PbFree) Storage Temperature Range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2021 Rev. 2 NGTB60N65FL2W/DNGTB60N65FL2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.28 C/W JC Thermal resistance junctiontocase, for Diode R 0.62 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 650 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 60 A V 1.50 1.64 2.00 V GE C CEsat V = 15 V, I = 60 A, T = 175C 2.00 GE C J Gateemitter threshold voltage V = V , I = 350 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 650 V I 0.1 mA GE CE CES emitter shortcircuited V = 0 V, V = 650 V, T 175C 5.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 7193 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 311 CE GE oes Reverse transfer capacitance C 202 res Gate charge total Q 318 nC g Gate to emitter charge V = 480 V, I = 60 A, V = 15 V Q 65 CE C GE ge Gate to collector charge Q 163 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 117 ns d(on) Rise time t 53 r Turnoff delay time T = 25C t 265 J d(off) V = 400 V, I = 60 A CC C Fall time t 75 f R = 10 g Turnon switching loss V = 0 V/ 15 V E 1.59 mJ GE on Turnoff switching loss E 0.66 off Total switching loss E 2.25 ts Turnon delay time t 113 ns d(on) Rise time t 55 r Turnoff delay time T = 150C t 277 d(off) J V = 400 V, I = 60 A CC C Fall time t 1.0 f R = 10 g Turnon switching loss V = 0 V/ 15 V E 2.0 mJ GE on Turnoff switching loss E 1.1 off Total switching loss E 3.1 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 60 A V 1.50 2.13 2.80 V GE F F V = 0 V, I = 60 A, T = 175C 2.26 GE F J Reverse recovery time t 96 ns rr T = 25C J Reverse recovery charge I = 60 A, V = 400 V Q 0.39 C F R rr di /dt = 200 A/ s F Reverse recovery current I 6.8 A rrm Reverse recovery time t 177 ns rr T = 175C J Reverse recovery charge I = 60 A, V = 400 V Q 1.53 C F R rr di /dt = 200 A/ s F Reverse recovery current I 13 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2