NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology T = 175C Jmax 75 A, 600 V Soft Fast Reverse Recovery Diode V = 1.70 V Optimized for High Speed Switching CEsat 5 s ShortCircuit Capability E = 1.0 mJ OFF These are PbFree Devices C Typical Applications Solar Inverters Uninterruptible Power Supplies (UPS) G Welding ABSOLUTE MAXIMUM RATINGS E Rating Symbol Value Unit Collectoremitter voltage V 600 V CES Collector current I A C TC = 25C 100 TC = 100C 75 TO247 Diode Forward Current I A G F CASE 340AL TC = 25C 100 C E TC = 100C 75 Diode Pulsed Current I 200 A FM T Limited by T Max PULSE J MARKING DIAGRAM Pulsed collector current, T I 200 A pulse CM limited by T Jmax Shortcircuit withstand time t 5 s SC V = 15 V, V = 400 V, GE CE T +150C J 75N60FL2 Gateemitter voltage V 20 V GE AYWWG V Transient gateemitter voltage 30 (T = 5 s, D < 0.10) PULSE Power Dissipation P W D TC = 25C 595 TC = 100C 265 Operating junction temperature T 55 to +175 C J A = Assembly Location range Y = Year WW = Work Week Storage temperature range T 55 to +175 C stg G = PbFree Package Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. NGTB75N60FL2WG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: September, 2016 Rev. 5 NGTB75N60FL2W/DNGTB75N60FL2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.28 C/W JC Thermal resistance junctiontocase, for Diode R 0.62 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 75 A V 1.50 1.75 2.00 V GE C CEsat V = 15 V, I = 75 A, T = 175C 2.30 GE C J Gateemitter threshold voltage V = V , I = 350 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.1 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 175C 4.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 7500 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 300 CE GE oes Reverse transfer capacitance C 190 res Gate charge total Q 310 nC g Gate to emitter charge V = 480 V, I = 75 A, V = 15 V Q 60 CE C GE ge Gate to collector charge Q 150 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 110 ns d(on) Rise time t 48 r Turnoff delay time T = 25C t 270 J d(off) V = 400 V, I = 75 A CC C Fall time t 70 f R = 10 g Turnon switching loss V = 0 V/ 15 V E 2.2 mJ GE on Turnoff switching loss E 1.1 off Total switching loss E 3.3 ts Turnon delay time t 100 ns d(on) Rise time t 50 r Turnoff delay time T = 150C t 280 d(off) J V = 400 V, I = 75 A CC C Fall time t 100 f R = 10 g Turnon switching loss V = 0 V/ 15 V E 2.8 mJ GE on Turnoff switching loss E 1.6 off Total switching loss E 4.4 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 75 A V 1.70 2.20 2.90 V GE F F V = 0 V, I = 75 A, T = 175C 2.40 GE F J Reverse recovery time t 80 ns rr T = 25C J Reverse recovery charge I = 75 A, V = 400 V Q 0.40 C F R rr di /dt = 200 A/ s F Reverse recovery current I 8 A rrm Reverse recovery time t 143 ns rr T = 175C J Reverse recovery charge I = 75 A, V = 400 V Q 1.45 C F R rr di /dt = 200 A/ s F Reverse recovery current I 16 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2