HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes o 21A, 1200V, T = 25 C C The HGTG5N120BND and HGTP5N120BND are Non- 1200V Switching SOA Capability Punch Through (NPT) IGBT designs. They are new o Typical Fall Time 175ns at T = 150 C members of the MOS gated high voltage switching IGBT J family. IGBTs combine the best features of MOSFETs and Short Circuit Rating bipolar transistors. This device has the high input impedance Low Conduction Loss of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type Thermal Impedance SPICE Model TA49308. The Diode used is the development type TA49058 Temperature Compensating SABER Model www.fairchildsemi.com (Part number RHRD6120). Related Literature The IGBT is ideal for many high voltage switching - TB334 Guidelines for Soldering Surface Mount applications operating at moderate frequencies where low Components to PC Boards conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays Packaging and contactors. JEDEC STYLE TO-247 Formerly Developmental Type TA49306. E C Ordering Information COLLECTOR G (FLANGE) PART NUMBER PACKAGE BRAND HGTG5N120BND TO-247 5N120BND HGTP5N120BND TO-220AB 5N120BND NOTE: When ordering, use the entire part number. i.e., HGTG5N120BND. JEDEC TO-220AB (ALTERNATE VERSION) Symbol C COLLECTOR (FLANGE) E C G G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1HGTG5N120BND, HGTP5N120BND o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C HGTG5N120BND HGTP5N120BND UNITS Collector to Emitter Voltage BV 1200 V CES Collector Current Continuous o At T = 25 C . I 21 A C C25 o At T = 110 C . I 10 A C C110 Collector Current Pulsed (Note 1) . I 40 A CM Gate to Emitter Voltage Continuous . V 20 V GES Gate to Emitter Voltage Pulsed V 30 V GEM o Switching Safe Operating Area at T = 150 C (Figure 2) . SSOA 30A at 1200V J o Power Dissipation Total at T = 25 C . P 167 W C D o o Power Dissipation Derating T > 25 C 1.33 W/ C C o Operating and Storage Junction Temperature Range T , T -55 to 150 C J STG Maximum Lead Temperature for Soldering o Leads at 0.063in (1.6mm) from case for 10s T 300 C L o Package Body for 10s, see Tech Brief 334 T 260 C pkg Short Circuit Withstand Time (Note 2) at V = 15V t 8 s GE SC Short Circuit Withstand Time (Note 2) at V = 12V t 15 s GE SC CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. o 2. V = 840V, T = 125 C, R = 25. CE(PK) J G o Electrical Specifications T = 25 C, Unless Otherwise Specified C PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0V 1200 - - V CES C GE o Collector to Emitter Leakage Current I V = 1200V T = 25 C - - 250 A CES CE C o T = 125 C - 100 - A C o T = 150C- - 1.5 mA C o Collector to Emitter Saturation Voltage V I = 5A, T = 25 C - 2.45 2.7 V CE(SAT) C C V = 15V GE o T = 150C- 3.7 4.2 V C Gate to Emitter Threshold Voltage V I = 45 A, V = V 6.0 6.8 - V GE(TH) C CE GE Gate to Emitter Leakage Current I V = 20V - - 250 nA GES GE o Switching SOA SSOA T = 150 C, R = 25, V = 15V, 30 - - A J G GE L = 5mH, V = 1200V CE(PK) Gate to Emitter Plateau Voltage V I = 5A, V = 600V - 10.5 - V GEP C CE On-State Gate Charge Q I = 5A, V = 15V - 53 65 nC G(ON) C GE V = 600V CE V = 20V - 60 72 nC GE o Current Turn-On Delay Time t IGBT and Diode at T = 25 C, -22 25 ns d(ON)I J I = 5A, CE Current Rise Time t -15 20 ns rI V = 960V, CE V = 15V, Current Turn-Off Delay Time t GE - 160 180 ns d(OFF)I R = 25 , G Current Fall Time t - 130 160 ns fI L = 5mH, Test Circuit (Figure 20) Turn-On Energy E - 450 600 J ON Turn-Off Energy (Note 3) E - 390 450 J OFF 2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1