HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features o The HGTG10N120BN, HGTP10N120BN and 35A, 1200V, T = 25 C C HGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high o Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C voltage switching IGBT family. IGBTs combine the best J features of MOSFETs and bipolar transistors. This device Short Circuit Rating has the high input impedance of a MOSFET and the low on- Low Conduction Loss state conduction loss of a bipolar transistor. Avalanche Rated The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low Thermal Impedance SPICE Model conduction losses are essential, such as: AC and DC motor Temperature Compensating SABER Model www.fairchildsemi.com controls, power supplies and drivers for solenoids, relays and contactors. Related Literature - TB334 Guidelines for Soldering Surface Mount Formerly Developmental Type TA49290. Components to PC Boards Ordering Information Packaging PART NUMBER PACKAGE BRAND JEDEC STYLE TO-247 HGTG10N120BN TO-247 G10N120BN E C HGTP10N120BN TO-220AB 10N120BN COLLECTOR G (FLANGE) HGT1S10N120BNS TO-263AB 10N120BN NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g. HGT1S10N120BNST. Symbol C JEDEC TO-220AB (ALTERNATE VERSION) G COLLECTOR E (FLANGE) C G E JEDEC TO-263AB COLLECTOR (FLANGE) G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C HGTG10N120BN HGTP10N120BN HGT1S10N120BNS UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV 1200 V CES Collector Current Continuous o At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 35 A C C25 o At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 17 A C C110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 80 A CM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 20 V GES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V 30 V GEM o Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 55A at 1200V J o Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P 298 W C D o o Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/ C C Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E 80 mJ AV o Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T -55 to 150 C J STG Maximum Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T 300 C L o Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T 260 C pkg Short Circuit Withstand Time (Note 3) at V = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t 8 s GE SC Short Circuit Withstand Time (Note 3) at V = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t 15 s GE SC CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. o 2. I = 20A, L = 400 H, T = 25 C. CE J o 3. V = 840V, T = 125 C, R = 10. CE(PK) J G o Electrical Specifications T = 25 C, Unless Otherwise Specified C PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0V 1200 - - V CES C GE Emitter to Collector Breakdown Voltage BV I = 10mA, V = 0V 15 - - V ECS C GE o Collector to Emitter Leakage Current I V = 1200V T = 25 C - - 250 A CES CE C o T = 125 C - 150 - A C o T = 150C- - 2 mA C o Collector to Emitter Saturation Voltage V I = 10A, T = 25 C - 2.45 2.7 V CE(SAT) C C V = 15V GE o T = 150C- 3.7 4.2 V C Gate to Emitter Threshold Voltage V I = 90 A, V = V 6.0 6.8 - V GE(TH) C CE GE Gate to Emitter Leakage Current I V = 20V - - 250 nA GES GE o Switching SOA SSOA T = 150 C, R = 10, V = 15V, 55 - - A J G GE L = 400 H, V = 1200V CE(PK) Gate to Emitter Plateau Voltage V I = 10A, V = 600V - 10.4 - V GEP C CE On-State Gate Charge Q I = 10A, V = 15V - 100 120 nC G(ON) C GE V = 600V CE V = 20V - 130 150 nC GE 2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1