IGBT - NPT 600 V HGTG30N60B3 Description The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low onstate conduction loss www.onsemi.com ofabipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low V I CES C conduction losses are essential, such as: UPS, solar inverter and power 1200 V 30 A supplies. Features C 30 A, 600 V, T = 110C C Low Saturation Voltage: V = 1.45 V I = 30 A CE(SAT) C Typical Fall Time . 90 ns at T = 150C J Short Circuit Rating G Low Conduction Loss This Device is PbFree E E C G TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K G30N60B3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code G30N60B3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: March, 2020 Rev. 3 HGTG30N60B3/DHGTG30N60B3 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Description Ratings Unit BV Collector to Emitter Voltage 600 V CES I Collector Current Continuous T = 25C 60 A C C T = 110C 30 A C I Collector Current Pulsed (Note 1) 220 A CM V Gate to Emitter Voltage Continuous 20 V GES V Gate to Emitter Voltage Pulsed 30 V GEM SSOA Switching Safe Operating Area at T = 150C (Figure 2) 60 A at 600 V J P Power Dissipation Total T = 25C 208 W D C Power Dissipation Derating T > 25C 1.67 W/C C E Reverse Voltage Avalanche Energy 100 mJ ARV T T Operating and Storage Junction Temperature Range 55 to +150 C J, STG T Maximum Lead Temperature for Soldering 260 C L T Short Circuit Withstand Time (Note 2) V = 12 V 4 s SC GE Short Circuit Withstand Time (Note 2) V = 10 V 10 s GE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. V = 360 V, T = 125C, R = 3 CE(PK) J G PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Shipping HGTG30N60B3 G30N60B3 TO247 Tube 450/Tube ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Collector to Emitter Breakdown Voltage I = 250 A, V = 0 V 600 V CES C GE BV Emitter to Collector Breakdown Voltage I = 10 mA, V = 0 V 20 V ECS C GE A I Collector to Emitter Leakage Current V = BV , T = 25C 250 CES CE CES C V = BV , T = 150C 3.0 mA GE CES C Collector to Emitter Saturation Voltage I = I , V = 15 V, 1.45 1.9 V V C C110 GE CE(SAT) T = 25C C I = I , V = 15 V, 1.7 2.1 V C C110 GE T = 150C C V Gate to Emitter Threshold Voltage I = 250 A, V = V 4.2 5.0 6.0 V GE(th) C CE GE I Gate to Emitter Leakage Current V = 20 V 250 nA GES GE T = 150C, R = 3 SSOA Switching SOA 200 A J G V = 15 V, L = 100 H, GE V = 480 V CE(PK) T = 150C, R = 3 60 A J G V = 15 V, L = 100 H, GE V = 600 V CE(PK) V Gate to Emitter Plateau Voltage I = I , V = 0.5 BV 7.2 V GEP C C110 CE CES Q OnState Gate Charge I = I , V = 0.5 BV , 170 190 nC C C110 CE CES G(ON) V = 15 V GE I = I , V = 0.5 BV , 230 250 nC C C110 CE CES V = 20 V GE www.onsemi.com 2