UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D www.onsemi.com The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar C transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25C and G 150C. The IGBT used is the development type TA49170. The diode used in antiparallel with the IGBT is the development type TA49053. E The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are E essential, such as: AC and DC motor controls, power supplies and C G drivers for solenoids, relays and contactors. Formerly Developmental Type TA49172. Features 60 A, 600 V, T = 25C C TO2473LD SHORT LEAD 600 V Switching SOA Capability CASE 340CK JEDEC STYLE Typical Fall Time 90 ns at T = 150C J Short Circuit Rating MARKING DIAGRAM Low Conduction Loss Hyperfast AntiParallel Diode This is a PbFree Device Y&Z&3&K G30N60B3D Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code G30N60B3D = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: April, 2020 Rev. 2 HGTG30N60B3D/DHGTG30N60B3D ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise specified) C Parameter Symbol HGTG30N60B3D Unit Collector to Emitter Voltage BV 600 V CES Collector Current Continuous I 60 A At T = 25C C25 C I 30 A At T = 110C C110 C Average Diode Forward Current at 110C I 25 A EC(AVG) Collector Current Pulsed (Note 1) I 220 A CM Gate to Emitter Voltage Continuous V 20 V GES Gate to Emitter Voltage Pulsed V 30 V GEM Switching Safe Operating Area at T = 150C, (Figure 2) SSOA 60 A at 600 V J Power Dissipation Total at T = 25C P 208 W C D Power Dissipation Derating T > 25C 1.67 W/C C Operating and Storage Junction Temperature Range T , T 55 to 150 C J STG Maximum Lead Temperature for Soldering T 260 C L Short Circuit Withstand Time (Note 2) at V = 12 V t 4 s GE SC Short Circuit Withstand Time (Note 2) at V = 10 V t 10 s GE SC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. V = 360 V, T =125C, R = 3 CE(PK) J G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) C Parameter Symbol Test Condition Min Typ Max Unit Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0 V 600 V CES C GE Collector to Emitter Leakage Current I V = BV T = 25C 250 A CES CE CES J T = 150C 3 mA J Collector to Emitter Saturation Voltage V I = I , V = 15 V T = 25C 1.45 1.9 V CE(SAT) C C110 GE J T = 150C 1.7 2.1 V J Gate to Emitter Threshold Voltage V I = 250 A, V = V 4.2 5 6 V GE(TH) C CE GE Gate to Emitter Leakage Current I V = 20 V 250 nA GES GE Switching SOA SSOA T = 150C, R = 3 , V = 480 V 200 A J G CE(PK) V = 15 V, L = 100 H, GE V = 600 V 60 A CE(PK) Gate to Emitter Plateau Voltage V I = I , V = 0.5 BV 7.2 V GEP C C110 CE CES OnState Gate Charge Q I = I , V = 15 V 170 190 nC G(ON) C C110 GE V = 0.5 BV CE CES V = 20 V 230 250 nC GE Current TurnOn Delay Time t IGBT and Diode at T = 25C, 36 ns d(ON)I J I = I , CE C110 Current Rise Time t 25 ns rI V = 0.8 BV , CE CES V = 15 V, Current TurnOff Delay Time t GE 137 ns d(OFF)I R = 3 , G Current Fall Time t 58 ns fI L = 1 mH, Test Circuit (Figure 19) TurnOn Energy E 550 800 J ON TurnOff Energy (Note 3) E 680 900 J OFF Current TurnOn Delay Time t IGBT and Diode at T = 150C, 32 ns J d(ON)I I = I , CE C110 Current Rise Time t 24 ns rI V = 0.8 BV , CE CES V = 15 V, GE Current TurnOff Delay Time t 275 320 ns d(OFF)I R = 3 , G Current Fall Time t 90 150 ns L = 1 mH, fI Test Circuit (Figure 19) TurnOn Energy E 1300 1550 J ON TurnOff Energy (Note 3) E 1600 1900 J OFF Diode Forward Voltage V I = 30 A 1.95 2.5 V EC EC www.onsemi.com 2