SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG30N60A4D www.onsemi.com The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar C transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25C and G 150C. The IGBT used is the development type TA49343. The diode used in antiparallel is the development type TA49373. E This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are E essential. This device has been optimized for high frequency switch C G mode power supplies. Formerly Developmental Type TA49345. COLLECTOR Features (FLANGE) >100 kHz Operation 390 V, 30 A TO2473LD SHORT LEAD 200 kHz Operation 390 V, 18 A CASE 340CK JEDEC STYLE 600 V Switching SOA Capability Typical Fall Time 60 ns at T = 125C J MARKING DIAGRAM Low Conduction Loss Temperature Compensating Saber Model This is a PbFree Device Y&Z&3&K 30N60A4D Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code 30N60A4D = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: April, 2020 Rev. 2 HGTG30N60A4D/DHGTG30N60A4D ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise specified) C Parameter Symbol HGTG30N60A4D Unit Collector to Emitter Voltage BV 600 V CES Collector Current Continuous At T = 25C I 70 A C C25 At T = 110C I 60 A C C110 Collector Current Pulsed (Note 1) I 240 A CM Gate to Emitter Voltage Continuous V 20 V GES Gate to Emitter Voltage Pulsed V 30 V GEM Switching Safe Operating Area at T = 150C, (Figure 2) SSOA 150 A at 600 V J Power Dissipation Total at T = 25C P 463 W C D Power Dissipation Derating T > 25C 3.7 W/C C Operating and Storage Junction Temperature Range T , T 55 to 150 C J STG Maximum Temperature for Soldering T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0 V 600 V CES C GE Collector to Emitter Leakage Current I V = 600 V T = 25C 250 A CES CE J T = 125C 2.8 mA J Collector to Emitter Saturation Voltage V I = 30 A, V = 15 V T = 25C 1.8 2.6 V CE(SAT) C GE J T = 125C 1.6 2.0 V J Gate to Emitter Threshold Voltage V I = 250 A, V = V 4.5 5.2 7.0 V GE(TH) C CE GE Gate to Emitter Leakage Current I V = 20 V 250 nA GES GE Switching SOA SSOA 150 A T = 150C, R = 3 , V = 15 V, J G GE L = 100 H, V = 600 V CE Gate to Emitter Plateau Voltage V I = 30 A, V = 300 V 8.5 V GEP C CE OnState Gate Charge Q I = 30 A, V = 300 V V = 15 V 225 270 nC g(ON) C CE GE V = 20 V 300 360 nC GE IGBT and Diode at T = 25C, Current TurnOn Delay Time t 25 ns d(ON)I J I = 30 A, CE Current Rise Time t 12 ns rI V = 390 V, CE V = 15 V, Current TurnOff Delay Time t GE 150 ns d(OFF)I R = 3 , G Current Fall Time t 38 ns fI L = 200 H, Test Circuit (Figure 24) TurnOn Energy (Note 2) E 280 J ON1 TurnOn Energy (Note 2) E 600 J ON2 TurnOff Energy (Note 3) E 240 350 J OFF Current TurnOn Delay Time t IGBT and Diode at T = 125C, 24 ns d(ON)I J I = 30 A, CE Current Rise Time t 11 ns rI V = 390 V, CE V = 15 V, Current TurnOff Delay Time t GE 180 200 ns d(OFF)I R = 3 , G Current Fall Time t 58 70 ns fI L = 200 H, Test Circuit (Figure 24) TurnOn Energy (Note 2) E 280 J ON1 TurnOn Energy (Note 2) E 1000 1200 J ON2 TurnOff Energy (Note 3) E 450 750 J OFF Diode Forward Voltage V I = 30 A 2.2 2.5 V EC EC Diode Reverse Recovery Time t 40 55 ns I = 30 A, dI /dt = 200 A/ s rr EC EC I = 1 A, dI /dt = 200 A/ s 30 42 ns EC EC www.onsemi.com 2