HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7A are MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5A the best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capability devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The o Typical Fall Time . 75ns at T = 125 C J much lower on-state voltage drop varies only moderately o o Low Conduction Loss between 25 C and 150 C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49331. Ordering Information Symbol PART NUMBER PACKAGE BRAND C HGT1S7N60A4S9A TO-263AB G7N60A4 HGTG7N60A4 TO-247 G7N60A4 HGTP7N60A4 TO-220AB G7N60A4 G NOTE: When ordering, use the entire part number. E Packaging JEDEC STYLE TO-247 JEDEC TO-220AB E C G E C G COLLECTOR (FLANGE) COLLECTOR (BOTTOM SIDE METAL) JEDEC TO-263AB COLLECTOR G (FLANGE) E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C ALL TYPES UNITS Collector to Emitter Voltage . BV 600 V CES Collector Current Continuous o At T = 25 C I 34 A C C25 o At T = 110 C I 14 A C C110 Collector Current Pulsed (Note 1) .I 56 A CM Gate to Emitter Voltage Continuous V 20 V GES Gate to Emitter Voltage Pulsed . V 30 V GEM o Switching Safe Operating Area at T = 150 C, Figure 2 SSOA 35A at 600V J o Single Pulse Avalanche Energy at T = 25 C . E 25mJ at 7A C AS o Power Dissipation Total at T = 25 C P 125 W C D o o Power Dissipation Derating T > 25 C 1.0 W/ C C o Operating and Storage Junction Temperature Range . T , T -55 to 150 C J STG Maximum Lead Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s T 300 C L o Package Body for 10s, See Tech Brief 334 T 260 C PKG CAUTION: Stresses above those listed in Device Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. o Electrical Specifications T = 25 C, Unless Otherwise Specified J PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0V 600 - - V CES C GE Emitter to Collector Breakdown Voltage BV I = -10mA, V = 0V 20 - - V ECS C GE o Collector to Emitter Leakage Current I V = 600V T = 25 C - - 250 A CES CE J o T = 125C- - 2 mA J o Collector to Emitter Saturation Voltage V I = 7A, T = 25C- 1.9 2.7 V CE(SAT) C J V = 15V GE o T = 125C- 1.6 2.2 V J Gate to Emitter Threshold Voltage V I = 250 A, V = 600V 4.5 5.9 7.0 V GE(TH) C CE Gate to Emitter Leakage Current I V = 20V - - 250 nA GES GE o Switching SOA SSOA T = 150 C, R = 25, V = 15V 35 - - A J G GE L = 100 H, V = 600V CE Pulsed Avalanche Energy E I = 7A, L = 500H25--mJ AS CE Gate to Emitter Plateau Voltage V I = 7A, V = 300V - 9.0 - V GEP C CE On-State Gate Charge Q I = 7A, V = 15V - 37 45 nC g(ON) C GE V = 300V CE V = 20V - 48 60 nC GE o Current Turn-On Delay Time t IGBT and Diode at T = 25 C -11 - ns d(ON)I J I = 7A CE Current Rise Time t -11 - ns rI V = 390V CE Current Turn-Off Delay Time t - 100 - ns V = 15V d(OFF)I GE R = 25 G Current Fall Time t -45 - ns fI L = 1mH Turn-On Energy (Note 2) E -55 - J Test Circuit (Figure 20) ON1 Turn-On Energy (Note 2) E - 120 150 J ON2 Turn-Off Energy (Note 3) E -60 75 J OFF 2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2