HGTP20N60A4 ON Semiconductor

HGTG20N60A4 Data Sheet November 2013 File Number Features 600 V SMPS IGBT 40 A, 600 V T = 110C The HGTG20N60A4 combines the best features of high C input impedance of a MOSFET and the low on-state Low Saturation Voltage : V = 1.8 V I = 20 A CE(sat) C conduction loss of a bipolar transistor. This IGBT is ideal for Typical Fall Time............55ns at T = 125C J many high voltage switching applications operating at high frequencies where low conduction losses are essential. This Low Conduction Loss device has been optimized for fast switching applications, such as UPS, welder and induction heating. Formerly Developmental Type TA49339. Packaging JEDEC STYLE TO-247 Ordering Information PART NUMBER PACKAGE BRAND HGTG20N60A4 TO-247 20N60A4 NOTE: When ordering, use the entire part number. G Symbol C TO-247 E C G E 2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com HGTG20N60A4 Rev. C1HGTG20N60A4 o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C Ratings UNIT Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV 600 V CES Collector Current Continuous o At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 70 A C C25 o At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 40 A C C110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 280 A CM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V 20 V GES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 30 V GEM o Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V J o Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P 290 W C D o o Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/ C C o Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T -55 to 150 C J STG Maximum Lead Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T 300 C L o Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T 260 C PKG CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. o Electrical Specifications T = 25 C, Unless Otherwise Specified J PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0V 600 - - V CES C GE Emitter to Collector Breakdown Voltage BV I = -10mA, V = 0V 20 - - V ECS C GE o Collector to Emitter Leakage Current I V = 600V T = 25 C - - 250 A CES CE J o T = 125C- - 2.0 mA J o Collector to Emitter Saturation Voltage V I = 20A, T = 25C- 1.8 2.7 V CE(SAT) C J V = 15V GE o T = 125C- 1.6 2.0 V J Gate to Emitter Threshold Voltage V I = 250 A, V = 600V 4.5 5.5 7.0 V GE(TH) C CE Gate to Emitter Leakage Current I V = 20V - - 250 nA GES GE o Switching SOA SSOA T = 150 C, R = 3V = 15V 100 - - A J G GE L = 100 H, V = 600V CE Gate to Emitter Plateau Voltage V I = 20A, V = 300V - 8.6 - V GEP C CE On-State Gate Charge Q I = 20A, V = 15V - 142 162 nC g(ON) C GE V = 300V CE V = 20V - 182 210 nC GE o Current Turn-On Delay Time t IGBT and Diode at T = 25 C -15 - ns d(ON)I J I = 20A CE Current Rise Time t -12 - ns rI V = 390V CE Current Turn-Off Delay Time t V =15V -73 - ns d(OFF)I GE R = 3 G Current Fall Time t -32 - ns fI L = 500 H Turn-On Energy (Note 3) E Test Circuit (Figure 20) - 105 - J ON1 Turn-On Energy (Note 3) E - 280 350 J ON2 Turn-Off Energy (Note 2) E - 150 200 J OFF 2005 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com HGTG20N60A4 Rev. C1