HMHA2801 ON Semiconductor

HMHA281, HMHA2801 Series 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Description The HMHA281 and HMHA2801 series devices consist of a gallium www.onsemi.com arsenide infrared emitting diode driving a silicon phototransistor in a compact 4pin miniflat package. The lead pitch is 1.27 mm. ANODE 1 4 COLLECTOR Features Compact 4Pin Package CATHODE 2 3 EMITTER 2.4 mm Maximum Standoff Height HalfPitch Leads for Optimum Board Space Savings Current Transfer Ratio: Phototransistor Optocoupler HMHA281: 50% to 600% HMHA2801: 80% to 600% HMHA2801A: 80% to 160% HMHA2801B: 130% to 260% HMHA2801C: 200% to 400% Safety and Regulatory Approvals: UL1577, 3.750 VAC for 1 Minute MPF4 RMS CASE 100AL DINEN/IEC6074755, 565 V Peak Working Insulation Voltage These Devices are PbFree and are RoHS Compliant MARKING DIAGRAM Applications Digital Logic Inputs ON281 Microprocessor Inputs VXYYM1 Power Supply Monitor ON = ON Semiconductor Logo Twisted Pair Line Receiver 281 = Device Number Telephone Line Receiver V = DIN EN/IEC6074755 Option (only appears on component ordered with this option) X = OneDigit Year Code, e.g., 5 YY = Digit Work Week, Ranging from 01 to 53 M1 = Assembly Package Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: August, 2018 Rev. 6 HMHA2801B/DHMHA281, HMHA2801 Series Table 1. SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 V IIV RMS < 300 V IIII RMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , Type and Sample Test PR IORM PR 904 V peak with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 100% Production Test IORM PR 1060 V peak with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 565 V IORM peak V Highest Allowable OverVoltage 4000 V IOTM peak External Creepage 5 mm External Clearance 5 mm 0.4 DTI Distance Through Insulation (Insulation Thickness) mm Case Temperature (Note 1) T 150 C S Input Current (Note 1) I 200 mA S, INPUT Output Power (Note 1) 300 mW P S, OUTPUT 9 Insulation Resistance at T , V = 500 V (Note 1) >10 R S IO IO 1. Safety limit values maximum values allowed in the event of a failure. www.onsemi.com 2