SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D www.onsemi.com The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar C transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25C and G 150C. The IGBT used is the development type TA49339. The diode used in antiparallel is the development type TA49372. E This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are E essential. This device has been optimized for high frequency switch C G mode power supplies. Formerly Developmental Type TA49341. COLLECTOR Features (FLANGE) >100 kHz Operation 390 V, 20 A TO2473LD SHORT LEAD 200 kHz Operation 390 V, 12 A CASE 340CK JEDEC STYLE 600 V Switching SOA Capability Typical Fall Time 55 ns at T = 125C J MARKING DIAGRAM Low Conduction Loss Temperature Compensating Saber Model This is a PbFree Device Y&Z&3&K 20N60A4D Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code 20N60A4D = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: April, 2020 Rev. 3 HGTG20N60A4D/DHGTG20N60A4D ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise specified) C Parameter Symbol HGTG20N60A4D Unit Collector to Emitter Voltage BV 600 V CES Collector Current Continuous I 70 A At T = 25C C25 C I 40 A At T = 110C C110 C Collector Current Pulsed (Note 1) I 280 A CM Diode Continuous Forward Current I 20 A FM110 Diode Maximum Forward Current I 80 A FM Gate to Emitter Voltage Continuous V 20 V GES Gate to Emitter Voltage Pulsed V 30 V GEM Switching Safe Operating Area at T = 150C, (Figure 2) SSOA 100 A at 600 V J Power Dissipation Total at T = 25C P 290 W C D Power Dissipation Derating T > 25C 2.32 W/C C Operating and Storage Junction Temperature Range T , T 55 to 150 C J STG Maximum Lead Temperature for Soldering T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0 V 600 V CES C GE Collector to Emitter Leakage Current I V = 600 V T = 25C 250 A CES CE J T = 125C 2.0 mA J Collector to Emitter Saturation Voltage V I = 20 A, V = 15 V T = 25C 1.8 2.7 V CE(SAT) C GE J T = 125C 1.6 2.0 V J Gate to Emitter Threshold Voltage V I = 250 A, V = 600 V 4.5 5.5 7.0 V GE(TH) C CE Gate to Emitter Leakage Current I V = 20 V 250 nA GES GE Switching SOA SSOA T = 150C, R = 3 , V = 15 V, 100 A J G GE L = 100 H, V = 600 V CE Gate to Emitter Plateau Voltage V I = 20 A, V = 300 V 8.6 V GEP C CE OnState Gate Charge Q I = 20 A, V = 300 V V = 15 V 142 162 nC g(ON) C CE GE V = 20 V 182 210 nC GE Current TurnOn Delay Time t IGBT and Diode at T = 25C, 15 ns d(ON)I J I = 20 A, CE Current Rise Time t 12 ns rI V = 390 V, CE V = 15 V, GE Current TurnOff Delay Time t 73 ns d(OFF)I R = 3 , G Current Fall Time t 32 ns fI L = 500 H, Test Circuit Figure 24 TurnOn Energy (Note 3) E 105 J ON1 TurnOn Energy (Note 3) E 280 350 J ON2 TurnOff Energy (Note 2) E 150 200 J OFF Current TurnOn Delay Time t IGBT and Diode at T = 125C, 15 21 ns d(ON)I J I = 20 A, CE Current Rise Time t 13 18 ns rI V = 390 V, CE V = 15 V, GE Current TurnOff Delay Time t 105 135 ns d(OFF)I R = 3 , G Current Fall Time t 55 73 ns L = 500 H, fI Test Circuit Figure 24 TurnOn Energy (Note 3) E 115 J ON1 TurnOn Energy (Note 3) E 510 600 J ON2 TurnOff Energy (Note 2) E 330 500 J OFF www.onsemi.com 2