TM 1200V XPT IGBT V = 1200V IXYN100N120C3H1 CES TM GenX3 w/ Diode I = 60A C110 V 3.50V CE(sat) t = 110ns fi(typ) High-Speed IGBT for 20-50 kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 V T = 25C to 150C 1200 V CES J E V T = 25C to 150C, R = 1M 1200 V CGR J GE G V Continuous 20 V GES V Transient 30 V GEM I T = 25C (Chip Capability) 140 A C25 C E I T = 110C 60 A C110 C C I T = 110C 49 A F110 C I T = 25C, 1ms 420 A CM C G = Gate, C = Collector, E = Emitter I T = 25C 50 A either emitter terminal can be used as A C Main or Kelvin Emitter E T = 25C 1.2 J AS C SSOA V = 15V, T = 125C, R = 1 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features P T = 25C 690 W C C T -55 ... +150 C Optimized for Low Switching Losses J T 150 C Square RBSOA JM Isolation Voltage 2500V~ T -55 ... +150 C stg Anti-Parallel Sonic Diode V 50/60Hz t = 1min 2500 V~ ISOL Positive Thermal Coefficient of I 1mA t = 1s 3000 V~ ISOL Vce(sat) Avalanche Rated M Mounting Torque 1.5/13 Nm/lb.in. d High Current Handling Capability Terminal Connection Torque 1.3/11.5 Nm/lb.in. International Standard Package Weight 30 g Advantages High Power Density Symbol Test Conditions Characteristic Values Low Gate Drive Requirement (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250 A, V = 0V 1200 V CES C GE Applications V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE High Frequency Power Inverters I V = V , V = 0V 50 A CES CE CES GE UPS T = 125C 3 mA J Motor Drives SMPS I V = 0V, V = 20V 100 nA GES CE GE PFC Circuits V I = 100A, V = 15V, Note 1 2.96 3.50 V CE(sat) C GE Battery Chargers T = 150C 3.78 V J Welding Machines Lamp Ballasts 2018 IXYS CORPORATION, All Rights Reserved DS100407C(4/18)IXYN100N120C3H1 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 50 S fs C CE C 4950 pF ies C V = 25V, V = 0V, f = 1MHz 490 pF oes CE GE C 120 pF res Q 260 nC g(on) Q I = I , V = 15V, V = 0.5 V 47 nC ge C C110 GE CE CES Q 102 nC gc t 27 ns d(on) t 110 ns Inductive load, T = 25C ri J E 12.00 mJ I = I , V = 15V on C C110 GE t 120 ns V = 0.5 V , R = 1 d(off) CE CES G t 110 ns fi Note 2 E 4.90 mJ off t 27 ns d(on) Inductive load, T = 125C t 116 ns J ri I = I , V = 15V E 15.00 mJ C C110 GE on t V = 0.5 V , R = 1 146 ns CE CES G d(off) t 125 ns Note 2 fi E 6.15 mJ off R 0.18 C/W thJC R 0.05 C/W thCS Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 2.7 V F F GE T = 125C 1.95 V J I 50 A RM I = 60A, V = 0V, T = 125C F GE J -di /dt = 700A/s, V = 600V t 235F R ns rr R 0.52 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537