HGTG27N120BN / HGT5A27N120BN Data Sheet October 2004 72A, 1200V, NPT Series N-Channel IGBT Features o The HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, T = 25 C C Punch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capability of the MOS gated high voltage switching IGBT family. IGBTs o Typical Fall Time 140ns at T = 150 C combine the best features of MOSFETs and bipolar J transistors. This device has the high input impedance of a Short Circuit Rating MOSFET and the low on-state conduction loss of a bipolar Low Conduction Loss transistor. Thermal Impedance SPICE Model The IGBT is ideal for many high voltage switching Temperature Compensating SABER Model applications operating at moderate frequencies where low www.fairchildsemi.com conduction losses are essential, such as: AC and DC motor Avalanche Rated controls, power supplies and drivers for solenoids, relays and contactors. Packaging Formerly Developmental Type TA49280. JEDEC STYLE TO-247 E Ordering Information C COLLECTOR G (BOTTOM SIDE PART NUMBER PACKAGE BRAND METAL) HGTG27N120BN TO-247 G27N120BN HGT5A27N120BN TO-247-ST 27N120BN NOTE: When ordering, use the entire part number. Symbol C JEDEC STYLE TO-247-ST G E C COLLECTOR G (BOTTOM SIDE METAL) E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 2004 Fairchild Semiconductor Corporation HGTG27N120BN / HGT5A27N12BN Rev. C2HGTG27N120BN / HGT5A27N120BN o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C HGTG27N120BN UNITS Collector to Emitter Voltage BV 1200 V CES Collector Current Continuous o At T = 25 C . I 72 A C C25 o At T = 110 C . I 34 A C C110 Collector Current Pulsed (Note 1) . I 216 A CM Gate to Emitter Voltage Continuous . V 20 V GES Gate to Emitter Voltage Pulsed V 30 V GEM o Switching Safe Operating Area at T = 150 C (Figure 2) . SSOA 150A at 1200V J o Power Dissipation Total at T = 25 C . P 500 W C D o o Power Dissipation Derating T > 25 C 4.0 W/ C C Forward Voltage Avalanche Energy (Note 2) . E 135 mJ AV o Operating and Storage Junction Temperature Range T , T -55 to 150 C J STG o Maximum Lead Temperature for Soldering . T 260 C L Short Circuit Withstand Time (Note 3) at V = 15V t 8 s GE SC Short Circuit Withstand Time (Note 3) at V = 12V t 15 s GE SC CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by Max junction temperature. o 2. I = 30A, L = 400 H, T = 125 C CE J o 3. V = 960V, T = 125 C, R = 3. CE(PK) J G o Electrical Specifications T = 25 C, Unless Otherwise Specified C PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0V 1200 - - V CES C GE Emitter to Collector Breakdown Voltage BV I = 10mA, V = 0V 15 - - V ECS C GE o Collector to Emitter Leakage Current I V = 1200V T = 25 C - - 250 A CES CE C o T = 125 C - 300 - A C o T = 150C- - 4 mA C o Collector to Emitter Saturation Voltage V I = 27A, T = 25 C - 2.45 2.7 V CE(SAT) C C V = 15V o GE T = 150C- 3.8 4.2 V C Gate to Emitter Threshold Voltage V I = 250 A, V = V 66.6 - V GE(TH) C CE GE Gate to Emitter Leakage Current I V = 20V - - 250 nA GES GE o Switching SOA SSOA T = 150 C, R = 3, V = 15V, 150 - - A J G GE L = 200 H, V = 1200V CE(PK) Gate to Emitter Plateau Voltage V I = I , V = 0.5 BV -9.2 - V GEP C C110 CE CES On-State Gate Charge Q I = 27A, V = 15V - 270 325 nC G(ON) C GE V = 600V CE V = 20V - 350 420 nC GE o Current Turn-On Delay Time t IGBT and Diode at T = 25 C, -24 30 ns d(ON)I J I = 27A, CE Current Rise Time t -20 25 ns rI V = 960V, CE Current Turn-Off Delay Time t - 195 240 ns d(OFF)I V = 15V, GE R = 3, Current Fall Time t - 80 120 ns G fI L = 1mH, Turn-On Energy (Note 5) E -2.2 - mJ ON1 Test Circuit (Figure 18) Turn-On Energy (Note 5) E -2.7 3.3 mJ ON2 Turn-Off Energy (Note 4) E -2.3 2.8 mJ OFF 2004 Fairchild Semiconductor Corporation HGTG27N120BN / HGT5A27N12BN Rev. C2