TIG058E8-TL-H ON Semiconductor

Ordering number : ENA1381A TIG058E8 N-Channel IGBT TIG058E8 at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector-to-Emitter Breakdown Voltage V I =2mA, V =0V 400 V (BR)CES C GE Collector-to-Emitter Cutoff Current I V =320V, V =0V 10 A CES CE GE Gate-to-Emitter Leakage Current I V =6V, V =0V 10 A GES GE CE Gate-to-Emitter Threshold Voltage V (off) V =10V, I =1mA 0.4 0.9 V GE CE C Collector-to-Emitter Saturation Voltage V (sat) I =100A, V =4V 4.0 5.6 V CE C GE Input Capacitance Cies 2200 pF Output Capacitance Coes V =10V, f=1MHz 32 pF CE Reverse Transfer Capacitance Cres 24 pF Fig.1 Large Current R Load Switching Circuit R L C + M V CC R G TIG058E8 4V 100k 0V Note1. Gate Series Resistance R 230 is recommended for protection purpose at the time of turn OFF. However, G if dv / dt 400V / s is satis ed at customers actual set evaluation, R < 230 can also be used. G Note2. The collector voltage gradient dv / dt must be smaller than 400V / s to protect the device when it is turned off. Ordering Information Device Package Shipping memo TIG058E8-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free I -- V I -- V C CE C GE 200 200 Tc=25C V =10V CE 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0 12 34 5697 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Collector-to-Emitter Voltage, V -- V IT14281 Gate-to-Emitter Voltage, V -- V IT14282 CE GE No. A1381-2/7 2.5V 3.0V 75C 4.0V V =5.0V GE 25C Tc= --25C Collector Current, I -- A C Collector Current, I -- A C