AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C V = 600V CES Features Low V Trench IGBT Technology CE (ON) I = 60A, T = 100C C C Low switching losses Maximum Junction temperature 175 C G t 5s, T = 175C SC J(max) 5 S short circuit SOA Square RBSOA E V typ. = 1.6V 100% of the parts tested for 4X rated current (I ) CE(on) LM Positive V Temperature co-efficient n-channel CE (ON) Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution C C Lead Free Package Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to E E C C G G Low V and Low Switching losses CE (ON) TO-247AC TO-247AD Rugged transient Performance for increased reliability AUIRGP4063D AUIRGP4063D-E Excellent Current sharing in parallel operation Low EMI G C E Gate Collector Emitter Base part number Package Type Standard Pack Orderable Part Number Form Quantity AUIRGP4063D TO-247 Tube 25 AUIRGP4063D AUIRGP4063D-E TO-247 Tube 25 AUIRGP4063D-E Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 100 C C I T = 100C Continuous Collector Current 60 C C I Pulse Collector Current, V = 15V 144 CM GE I Clamped Inductive Load Current, V = 20V 192 A LM GE I T = 25C Diode Continous Forward Current 82 F C I T = 100C Diode Continous Forward Current 50 F C I Diode Maximum Forward Current 192 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 330 W D C P T = 100C Maximum Power Dissipation 170 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.45 C/W JC R (Diode) JC Thermal Resistance Junction-to-Case-(each Diode) 0.92 R CS Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R Thermal Resistance, Junction-to-Ambient (typical socket mount) 80 JA Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V Collector-to-E mitter B reakdown Voltage600 V V = 0V, I = 150 A CT 6 (BR)CES GE C V / T T emperature Coeff. of B reakdown Voltage 0.30 V/CV = 0V, I = 1mA (25C-175C) CT 6 (BR)CES J GE C 1.6 1.9 I = 48A, V = 15V, T = 25C 5,6,7 C GE J V Collector-to-Emitter Saturation Voltage 1.9 V I = 48A, V = 15V, T = 150C 9,10,11 CE(on) C GE J 2.0 I = 48A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 1.4mA 9, 10, GE(th) CE GE C V / TJ GE( t h) Threshold Voltage temp. coefficient -21 mV/C V = V , I = 1.0mA (25C - 175C) 11, 12 CE GE C gfe Forward Transconductance 32 S V = 50V, I = 48A, PW = 80 s CE C I Collector-to-Emitter Leakage Current 1.0 150 AV = 0V, V = 600V CES GE CE 450 1000 V = 0V, V = 600V, T = 175C GE CE J 8 V Diode Forward Voltage Drop 1.95 2.91 V I = 48A FM F 1.45 I = 48A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig Q Total Gate Charge (turn-on) 95 140 I = 48A 24 g C CT 1 Q Gate-to-Emitter Charge (turn-on) 28 42 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 35 53 V = 400V gc CC CT 4 E Turn-On Switching Loss 625 1141 I = 48A, V = 400V, V = 15V on C CC GE E Turn-Off Switching Loss 1275 1481 JR = 10 , L = 200 H, L = 150nH, T = 25C off G S J E nergy los s es include tail & diode revers e recovery E Total Switching Loss 1900 2622 total CT 4 t Turn-On delay time 60 78 I = 48A, V = 400V, V = 15V d(on) C CC GE t Rise time 40 56 ns R = 10 , L = 200 H, L = 150nH, T = 25C r G S J t Turn-Off delay time 145 176 d(off) tf Fall time 35 46 13, 15 Eon Turn-On Switching Loss 1625 IC = 48A, VCC = 400V, VGE=15V E Turn-Off Switching Loss 1585 JR =10 , L=200 H, L =150nH, T = 175C CT 4 off G S J E Total Switching Loss 3210 E nergy los s es include tail & diode revers e recovery WF 1, WF 2 total t Turn-On delay time 55 I = 48A, V = 400V, V = 15V 14, 16 d(on) C CC GE t Rise time 45 ns R = 10 , L = 200 H, L = 150nH CT 4 r G S t Turn-Off delay time 165 T = 175C WF 1 d(off) J t Fall time 45 WF2 f C Input Capacitance 3025 pF V = 0V 23 ies GE C Output Capacitance 245 V = 30V oes CC C Reverse Transfer Capacitance 90 f = 1.0Mhz res 4 T = 175C, I = 192A J C CT 2 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CC Rg = 10 , V = +15V to 0V GE 22, CT 3 SCSOA Short Circuit Safe Operating Area 5 sV = 400V, Vp =600V CC WF4 Rg = 10 , VGE = +15V to 0V 17, 18, 19 Erec Reverse Recovery Energy of the Diode 845 JTJ = 175C 20, 21 trr Diode Reverse Recovery Time 115 ns VCC = 400V, IF = 48A I Peak Reverse Recovery Current 40 A V = 15V, Rg = 10 , L =200 H, L = 150nH WF3 rr GE s Notes: V = 80% (V ), V = 20V, L = 200H, R = 10. Pulse width limited by max. junction temperature. CC CES GE G Refer to AN-1086 for guidelines for measuring V safely. This is only applied to TO-247AC package. (BR)CES