AUIRGR4045D AUIRGU4045D WITH C ULTRAFAST SOFT RECOVERY DIODE Features Low V Trench IGBT Technology CE (on) = Low Switching Losses Maximum Junction temperature 175 C G = 5s SCSOA Square RBSOA E 100% of the parts tested for I LM n-channel Positive V Temperature Coefficient. CE (on) Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant Automotive Qualified* Benefits D-Pak I-Pak High Efficiency in a Wide Range of Applications AUIRGR4045D AUIRGU4045D Suitable for a Wide Range of Switching Frequencies due to Low V and Low Switching Losses CE (ON) Rugged Transient Performance for Increased Reliability GC E Excellent Current Sharing in Parallel Operation Gate Colletor Emitter Low EMI Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Units Max. V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 12 C C I T = 100C Continuous Collector Current 6.0 C C I Pulsed Collector Current, V = 15V 18 CM GE I Clamped Inductive Load Current, V = 20V 24 A LM GE I T =25C Diode Continuous Forward Current 8.0 F C 4.0 I T =100C Diode Continuous Forward Current F C Diode Maximum Forward Current 24 I FM 20 Continuous Gate-to-Emitter Voltage V V GE 30 Transient Gate-to-Emitter Voltage P T =25 Maximum Power Dissipation 77 W D C 39 P T =100 Maximum Power Dissipation D C T Operating Junction and C J -55 to + 175 T Storage Temperature Range STG 300 (0.063 in. (1.6mm) from case) Soldering Temperature, for 10 seconds Thermal Resistance Parameter Min. Typ. Max. Units Junction-to-Case - IGBT R 1.9 JC Junction-to-Case - Diode R 6.8 JC C/W R Junction-to-Ambient (PCB Mount) 50 JA R Junction-to-Ambient 110 JA *Qualification standards can be found at AUIRGR/U4045D Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V = 0V, I =100 A V Collector-to-Emitter Breakdown Voltage 600 V (BR)CES GE c CT6 o = 0V, I = 250A ( 25 -175 C ) V / T Temperature Coeff. of Breakdown Voltage 0.36 V/C V (BR)CES J GE c 1.7 2.0 I = 6.0A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.07 V I = 6.0A, V = 15V, T = 150C 5,6,7,9, CE(on) C GE J 2.14 I = 6.0A, V = 15V, T = 175C 10 ,11 C GE J V Gate Threshold Voltage 3.5 6.5 V V = V , I = 150A GE(th) CE GE C 9,10,11,12 o -13 V = V , I = 250A ( 25 -175 C ) V / TJ Threshold Voltage temp. coefficient mV/C CE GE C GE(th) gfe Forward Transconductance 5.8 S V = 25V, I = 6.0A, PW =80s CE C I 25 A V = 0V,V = 600V CES GE CE Collector-to-Emitter Leakage Current V = 0V, V = 600V, T =175C GE CE J 8 250 V 1.60 2.30 V I = 6.0A FM F Diode Forward Voltage Drop 1.30 I = 6.0A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20 V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig Q Total Gate Charge (turn-on) 13 19.5 I = 6.0A 24 g C Q V = 400V CT1 Gate-to-Emitter Charge (turn-on) 3.1 4.65 nC ge CC Q Gate-to-Collector Charge (turn-on) 6.4 9.6 V = 15V gc GE E Turn-On Switching Loss 56 86 I = 6.0A, V = 400V, V = 15V on C CC GE E = 47 , L=1mH, L = 150nH, T = 25C CT4 Turn-Off Switching Loss 122 143 J R off G S J E Total Switching Loss 178 229 Energy losses include tail and diode reverse recovery total t 27 35 I = 6.0A, V = 400V Turn-On delay time d(on) C CC t Rise time 11 15 ns R = 47 , L=1mH, L = 150nH CT4 r G S t Turn-Off delay time 75 93 T = 25C d(off) J t 17 22 Fall time f E Turn-On Switching Loss 140 I = 6.0A, V = 400V, V = 15V 13,15 on C CC GE E R = 47 , L=1mH, L = 150nH, T = 175C Turn-Off Switching Loss 189 J CT4 off G S J E Total Switching Loss 329 Energy losses include tail and diode reverse recovery WF1,WF2 total t Turn-On delay time 26 I = 6.0A, V = 400V 14,16 d(on) C CC t Rise time 12 ns R = 47 , L=1mH, L = 150nH CT4 r G S t Turn-Off delay time 95 T = 175C WF1,WF2 d(off) J t Fall time 32 f C Input Capacitance 350 V = 0V 23 ies GE C pF V = 30V Output Capacitance 29 oes CC C Reverse Transfer Capacitance 10 f = 1Mhz res T = 175C, I = 24A 4 J C = 500V, Vp =600V RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CT2 CC R = 100 , V = +20V to 0V G GE V = 400V, Vp =600V 22 CC SCSOA Short Circuit Safe Operating Area 5 s R = 100 , V = +15V to 0V CT3, WF4 G GE o Erec Reverse recovery energy of the diode 178 J T = 175 C 17,18,19 J V = 400V, I = 6.0A Diode Reverse recovery time 74 ns CC F trr 20,21 Irr Peak Reverse Recovery Current 12 A V = 15V, Rg = 47 , L=1mH, L =150nH WF3 GE S Notes: V = 80% (V ), V = 15V, L = 1.0mH, R = 47. CC CES GE G Pulse width limited by max. junction temperature. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994. 2 www.irf.com