X-On Electronics has gained recognition as a prominent supplier of AUIRGP50B60PD1E IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. AUIRGP50B60PD1E IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

AUIRGP50B60PD1E Infineon

AUIRGP50B60PD1E electronic component of Infineon
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Part No.AUIRGP50B60PD1E
Manufacturer: Infineon
Category: IGBT Transistors
Description: International Rectifier IGBT Transistors 600V AUTO WARP2 150KHZ COPACK IGBT
Datasheet: AUIRGP50B60PD1E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 13.13
10 : USD 11.5375
25 : USD 11
100 : USD 9.324
250 : USD 9.24
400 : USD 8.064
2800 : USD 7.812
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Qualification
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Brand
Factory Pack Quantity :
Height
Length
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Cnhts
Hts Code
Mxhts
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Subcategory
Taric
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We are delighted to provide the AUIRGP50B60PD1E from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AUIRGP50B60PD1E and other electronic components in the IGBT Transistors category and beyond.

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AUIRGP50B60PD1 AUTOMOTIVE GRADE AUIRGP50B60PD1-E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE V = 600V Applications CES C Automotive HEV and EV V typ. = 2.00V CE(on) PFC and ZVS SMPS Circuits V = 15V I = 33A GE C Equivalent MOSFET G Parameters Features E Low V NPT Technology, Positive Temperature CE(ON) R typ. = 61m CE(on) n-channel Coefficient I (FET equivalent) = 50A D Lower Parasitic Capacitances C Minimal Tail Current C HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant Automotive Qualified * E E C C G G Benefits TO-247AC TO-247AD AUIRGP50B60PD1 Parallel Operation for Higher Current Applications AUIRGP50B60PD1-E Lower Conduction Losses and Switching Losses G C E Higher Switching Frequency up to 150kHz Gate Collector Emitter Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRGP50B60PD1 TO-247AC Tube 25 AUIRGP50B60PD1 AUIRGP50B60PD1-E TO-247AD Tube 25 AUIRGP50B60PD1-E Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 75 C C I T = 100C Continuous Collector Current 45 C C I Pulse Collector Current (Ref. Fig. C.T.4) 150 CM I Clamped Inductive Load Current 150 A LM I T = 25C Diode Continuous Forward Current 40 F C I T = 100C Diode Continuous Forward Current 15 F C I Maximum Repetitive Forward Current 60 FSM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 390 D C W P T = 100C Maximum Power Dissipation 156 D C T Operating Junction and -55 to +150 J C T Storage Temperature Range STG Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case (each IGBT) 0.32 R (IGBT) JC 1.7 R (Diode) Thermal Resistance Junction-to-Case (each Diode) JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS 40 R Thermal Resistance, Junction-to-Ambient (typical socket mount) JA Weight 6.0 (0.21) g(oz) *Qualification standards can be found at www.infineon.com 1 2017-08-29 AUIRGP50B60PD1/AUIRGP50B60PD1-E Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref. Fig. V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.31 V/C V = 0V, I = 1mA (25C-125C) V / T (BR)CES J GE C R 1.7 Internal Gate Resistance 1MHz, Open Collector 4,5,6,8,9 G 2.00 2.35 I = 33A, V = 15V C GE 2.45 2.85 I = 50A, V = 15V C GE V Collector-to-Emitter Saturation Voltage V CE(on) 2.60 2.95 I = 33A, V = 15V, T = 125C C GE J 3.20 3.60 I = 50A, V = 15V, T = 125C C GE J 3.0 4.0 5.0 V V Gate Threshold Voltage I = 250A 7,8,9 GE(th) C Threshold Voltage temp. coefficient -10 mV/C V = V , I = 1.0mA V / TJ CE GE C GE(th) gfe Forward Transconductance 41 S V = 50V, I = 33A,PW = 80s CE C Collector-to-Emitter Leakage Current 5.0 500 A V = 0V, V = 600V GE CE I CES 1.0 mA V = 0V, V = 600V,T = 125C GE CE J 1.30 1.70 I = 15A F V Diode Forward Voltage Drop V 10 FM 1.20 1.60 I = 15A, T = 125C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V, V = 0V GES GE CE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref. Fig. Q Total Gate Charge (turn-on) 205 308 I = 33A 17 g C Q Gate-to-Emitter Charge (turn-on) 70 105 nC V = 15V CT1 ge GE Q Gate-to-Collector Charge (turn-on) 30 45 V = 400V CC gc E Turn-On Switching Loss 255 305 on E Turn-Off Switching Loss 375 445 off J I = 33A, V = 390V, E Total Switching Loss 630 750 C CC total t Turn-On delay time 30 40 V = +15V, d(on) GE CT3 ns t Rise time 10 15 R = 3.3 , L = 200H, r G t Turn-Off delay time 130 150 T = 25C J d(off) t Fall time 11 15 f E Turn-On Switching Loss 580 700 on CT3 E Turn-Off Switching Loss 480 550 J 11,13 off E Total Switching Loss 1060 1250 I = 33A, V = 390V, WF1,WF2 total C CC t Turn-On delay time 26 35 V = +1 5V, d(on) GE CT3 ns t Rise time 13 20 r R = 3.3 , L = 200H, G 12,14 t Turn-Off delay time 146 165 T = 125C d(off) J WF1,WF2 t Fall time 15 20 f C Input Capacitance 3648 V = 0V ies GE C Output Capacitance 322 V = 30V 16 oes CC C Reverse Transfer Capacitance 56 f = 1.0Mhz res pF C Effective Output Capacitance (Time Related) 215 oes eff. V = 0V, V = 0V to 480V 15 GE CE Effective Output Capacitance (Energy Related) C 163 oes eff. (ER) T = 150C, I = 150A 3 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp = 600V CT2 CC Rg = 22 , V = +15V to 0V GE 42 60 T = 25C J t Diode Reverse Recovery Time ns 19 rr 74 120 T = 125C J T = 25C 80 180 I = 15A, J F Q Diode Reverse Recovery Charge nC 21 rr 220 600 T = 125C J V = 200V, R di/dt = 200A/s 4.0 6.0 T = 25C 19,20,21,22 J I Peak Reverse Recovery Current A rr 6.5 10 T = 125C J CT5 Notes: R typ. = equivalent on-resistance = V typ./ IC, where V typ.= 2.00V and I =33A. I (FET Equivalent) is the equivalent MOSFET I rating 25C CE(on) CE(on) CE(on) C D D for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. V = 80% (V ), V = 20V, L = 28 H, R = 22 CC CES GE G Pulse width limited by max. junction temperature. Energy losses includetai and diode reverse recovery, Data generated with use of Diode 30ETH06. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . C eff.(ER) is a fixed capacitance that stores the same oes oes CE CES oes energy as C while V is rising from 0 to 80% V . oes CE CES Calculated continuous current based on maximum allowable junction temperature. Package current limit is 60A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 2017-08-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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