Ordering number : ENA1862A TIG065E8 N-Channel IGBT TIG065E8 at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector-to-Emitter Breakdown Voltage V I =2mA, V =0V 400 V (BR)CES C GE Collector-to-Emitter Cutoff Current I V =320V, V =0V 10 A CES CE GE Gate-to-Emitter Leakage Current I V =4V, V =0V 10 A GES GE CE Gate-to-Emitter Threshold Voltage V (off) V =10V, I =1mA 0.4 0.9 V GE CE C Collector-to-Emitter Saturation Voltage V (sat) I =100A, V =2.5V 4.2 7 V CE C GE Input Capacitance Cies 3100 pF Output Capacitance Coes V =10V, f=1MHz 30 pF CE Reverse Transfer Capacitance Cres 23 pF Fig.1 Large Current R Load Switching Circuit R L C M + V CC R G TIG065E8 V GE 100k Note1. The collector voltage gradient dv / dt must be smaller than 400V / s to protect the device of gate-series resistance R when it is turned off. G Ordering Information Device Package Shipping memo TIG065E8-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free I -- V I -- V C CE C GE 150 150 Tc=25C V =10V CE 125 125 100 100 75 75 50 50 25 25 0 0 0 12 34 5 6 7 8 9 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-to-Emitter Voltage, V -- V IT16024 Gate-to-Emitter Voltage, V -- V IT16025 CE GE No. A1862-2/8 1.8V 2.5V 3.0V 75C 25C V =4.0V GE Tc= --25C Collector Current, I -- A C Collector Current, I -- A C