TM XPT 600V IGBT V = 600V IXXN100N60B3H1 CES TM GenX3 w/ Diode I = 100A C90 V 1.80V CE(sat) t = 150ns fi(typ) Extreme Light Punch Through E IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E c V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V G CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C (Chip Calability) 170 A C25 C E c I T = 90C 100 A C90 C C I T = 110C 50 A F110 C I T = 25C, 1ms 440 A G = Gate, C = Collector, E = Emitter CM C c either emitter terminal can be used as I T = 25C 50 A A C Main or Kelvin Emitter E T = 25C 600 mJ AS C SSOA V = 15V, T = 150C, R = 2 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features t V = 15V, V = 360V, T = 150C 10 s sc GE CE J z Optimized for Low Switching Losses (SCSOA) R = 10, Non Repetitive G z International Standard Package P T = 25C 500 W z C C Square RBSOA z T -55 ... +150 C Isolation Voltage 2500V~ J z Anti-Parallel Ultra Fast Diode T 150 C JM z Optimized for 10-30kHz Switching T -55 ... +150 C stg z Avalanche Rated V 50/60Hz t = 1min 2500 V~ z ISOL Short Circuit Capability I 1mA t = 1s 3000 V~ z ISOL High Current Handling Capability M Mounting Torque 1.5/13 Nm/lb.in. d Terminal Connection Torque 1.3/11.5 Nm/lb.in. Advantages Weight 30 g z High Power Density z Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Power Inverters z UPS BV I = 250A, V = 0V 600 V CES C GE z Motor Drives V I = 250A, V = V 3.0 5.5 V z GE(th) C CE GE SMPS z PFC Circuits I V = V , V = 0V 50 A CES CE CES GE z Battery Chargers T = 125C 4 mA J z Welding Machines z Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE V I = 70A, V = 15V, Note 1 1.50 1.80 V CE(sat) C GE T = 150C 1.77 V J 2013 IXYS CORPORATION, All Rights Reserved DS100421B(04/13)IXXN100N60B3H1 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXXN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 22 40 S fs C CE C 4860 pF ies C V = 25V, V = 0V, f = 1MHz 475 pF oes CE GE C 83 pF res Q 143 nC g(on) Q I = 70A, V = 15V, V = 0.5 V 37 nC ge C GE CE CES Q 60 nC gc t 30 ns d(on) Inductive load, T = 25C t 70 ns J ri I = 70A, V = 15V E 1.9 mJ C GE on V = 360V, R = 2 t 120 ns CE G d(off) t 150 ns Note 2 fi E 2.0 2.8 mJ f of t 32 ns d(on) Inductive load, T = 150C t 60 ns J ri I = 70A, V = 15V E 2.3 mJ C GE on V = 360V, R = 2 t 150 ns CE G d(off) t 200 ns Note 2 fi E 2.8 mJ off R 0.25 C/W thJC R 0.05 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 1.6 2.5 V F F GE T = 150C 1.4 1.8 V J I 8.3 A I = 60A, V = 0V, T = 100C RM F GE J t -di /dt = 200A/s, V = 300V 140 ns rr F R R 0.42 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537