Advance Technical Information TM V = 600V XPT 600V IGBTs IXXK300N60B3 CES TM I = 300A GenX3 IXXX300N60B3 C110 V 1.6V CE(sat) t = 95ns Extreme Light Punch Through fi(typ) IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 600 V CES J C V T = 25C to 175C, R = 1M 600 V E CGR J GE Tab V Continuous 20 V GES V Transient 30 V GEM PLUS247 (IXXX) I T = 25C (Chip Capability) 550 A C25 C I Leads Current Limit 160 A LRMS I T = 110C (Chip Capability) 300 A C110 C I T = 25C, 1ms 1140 A CM C G I T = 25C 100 A G A C C Tab E E T = 25C 500 mJ AS C SSOA V = 15V, T = 150C, R = 1 I = 600 A GE VJ G CM G = Gate E = Emitter (RBSOA) Clamped Inductive Load V V CE CES C = Collector Tab = Collector t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 10, Non Repetitive G P T = 25C 2300 W Features C C T -55 ... +175 C J z Optimized for 10-30kHz Switching T 175 C JM z Square RBSOA T -55 ... +175 C z stg International Standard Packages z Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L z Short Circuit Capability T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD z High Current Handling Capability M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Advantages Weight TO-264 10 g PLUS247 6 g z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Applications J BV I = 250A, V = 0V 600 V z CES C GE Power Inverters z UPS V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE z Motor Drives I V = V , V = 0V 25 A z CES CE CES GE SMPS z T = 150C 2.5 mA PFC Circuits J z Battery Chargers I V = 0V, V = 20V 200 nA GES CE GE z Welding Machines z V I = 100A, V = 15V, Note 1 1.3 1.6 V Lamp Ballasts CE(sat) C GE T = 150C 1.4 V J 2012 IXYS CORPORATION, All Rights Reserved DS100503(10/12)IXXK300N60B3 IXXX300N60B3 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 50 S fs C CE C 13.3 nF ies C V = 25V, V = 0V, f = 1MHz 757 pF oes CE GE C 246 pF res Q 460 nC g Q I = 300A, V = 15V, V = 0.5 V 137 nC ge C GE CE CES Q 196 nC gc t 50 ns d(on) Inductive load, T = 25C t 87 ns J ri I = 100A, V = 15V E 3.45 mJ C GE on Terminals: 1 = Gate V = 400V, R = 1 t 190 ns CE G 2,4 = Collector d(off) 3 = Emitter t 95 ns Note 2 fi E 2.86 4.40 mJ f of t 50 ns d(on) Inductive load, T = 150C t 87 ns J ri I = 100A, V = 15V E 4.47 mJ C GE on V = 400V, R = 1 t 230 ns CE G d(off) t 200 ns Note 2 fi E 3.70 mJ off R 0.065 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 ADVANCE TECHNICAL INFORMATION A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 The product presented herein is under development. The Technical Specifications offered are derived 2 b 1.14 1.40 .045 .055 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a b 1.91 2.13 .075 .084considered reflectio of the anticipated result. IXYS reserves the right to change limits, test 1 b 2.92 3.12 .115 .123 2 conditions, and dimensions without notice. C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537