Complementary Silicon Transistors, Plastic, Medium-Power TIP100, TIP101, TIP102 (NPN) TIP105, TIP106, www.onsemi.com TIP107 (PNP) DARLINGTON 8 AMPERE Designed for generalpurpose amplifier and lowspeed switching applications. COMPLEMENTARY SILICON POWER TRANSISTORS Features High DC Current Gain 6080100 VOLTS, 80 WATTS h = 2500 (Typ) I FE C = 4.0 Adc MARKING CollectorEmitter Sustaining Voltage 30 mAdc DIAGRAM V = 60 Vdc (Min) TIP100, TIP105 CEO(sus) = 80 Vdc (Min) TIP101, TIP106 4 = 100 Vdc (Min) TIP102, TIP107 TO220AB Low CollectorEmitter Saturation Voltage CASE 221A TIP10xG V = 2.0 Vdc (Max) I STYLE 1 CE(sat) C AYWW = 3.0 Adc STYLE 1: PIN 1. BASE = 2.5 Vdc (Max) I = 8.0 Adc C 2. COLLECTOR 1 3. EMITTER Monolithic Construction with Builtin BaseEmitter Shunt Resistors 2 3 4. COLLECTOR These Devices are PbFree and are RoHS Compliant TIP10x = Device Code x = 0, 1, 2, 5, 6, or 7 A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2019 Rev. 15 TIP100/DTIP100, TIP101, TIP102 (NPN) TIP105, TIP106, TIP107 (PNP) MAXIMUM RATINGS TIP100, TIP101, TIP102, Rating Symbol TIP105 TIP106 TIP107 Unit Collector Emitter Voltage V 60 80 100 Vdc CEO Collector Base Voltage V 60 80 100 Vdc CB Emitter Base Voltage V 5.0 Vdc EB Collector Current Continuous I 8.0 C Peak 15 Adc Base Current I 1.0 Adc B Total Power Dissipation T = 25C P 80 W C D Derate above 25C 0.64 W/C Unclamped Inductive Load Energy (1) E 30 mJ Total Power Dissipation T = 25C P 2.0 W A D Derate above 25C 0.016 W/C Operating and Storage Junction Temperature Range T , T 65 to +150 C J stg THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 1.56 C/W JC Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. I = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, V = 20 V, R = 100 C CC BE ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (1) V Vdc CEO(sus) (I = 30 mAdc, I = 0) TIP100, TIP105 60 C B TIP101, TIP106 80 TIP102, TIP107 100 Collector Cutoff Current I Adc CEO (V = 30 Vdc, I = 0) TIP100, TIP105 CE B 50 (V = 40 Vdc, I = 0) TIP101, TIP106 CE B 50 (V = 50 Vdc, I = 0) TIP102, TIP107 CE B 50 Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) TIP100, TIP105 CB E 50 (V = 80 Vdc, I = 0) TIP101, TIP106 CB E 50 (V = 100 Vdc, I = 0) TIP102, TIP107 CB E 50 Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 8.0 mAdc BE C EBO ON CHARACTERISTICS (1) DC Current Gain h FE (I = 3.0 Adc, V = 4.0 Vdc) C CE 1000 20,000 (I = 8.0 Adc, V = 4.0 Vdc) C CE 200 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 3.0 Adc, I = 6.0 mAdc) C B 2.0 (I = 8.0 Adc, I = 80 mAdc) C B 2.5 BaseEmitter On Voltage (I = 8.0 Adc, V = 4.0 Vdc) V 2.8 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS SmallSignal Current Gain (I = 3.0 Adc, V = 4.0 Vdc, f = 1.0 MHz) h 4.0 C CE fe Output Capacitance (V = 10 Vdc, I = 0, f = 0.1 MHz) TIP105, TIP106, TIP107 C 300 pF CB E ob TIP100, TIP101, TIP102 200 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. www.onsemi.com 2