DATA SHEET www.onsemi.com NPN Darlington Transistor MARKING DIAGRAM C PZTA28, MMBTA28 E AYW C A28 B Description SOT223 This device is designed for applications requiring extremely high CASE 318H current gain at collector currents to 500 mA. Sourced from process 03. A = Assembly Location Features YW = Date Code A28 = Specific Device Code These are PbFree Devices ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MARKING DIAGRAM (Note 1, Note 2) C Symbol Parameter Value Unit E V CollectorEmitter Voltage 80 V CEO 3SS M B V CollectorBase Voltage 80 V CBO SOT23/SUPERSOT23 V EmitterBase Voltage 12 V EBO CASE 527AG I Collector Current Continuous 800 mA C 3SS = Specific Device Code T , T Operating and Storage Junction 55 to + 150 C J STG M = Date Code Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. Device Package Shipping 2. These are steadystate limits. onsemi should be consulted on applications involving pulsed or lowdutycycle operations. PZTA28 SOT223 4000 / Tape & Reel MMBTA28 SOT23 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: October, 2021 Rev. 2 PZTA28/DPZTA28, MMBTA28 THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A Max PZTA28 (Note 3) MMBTA28 (Note 4) Symbol Parameter Unit P Total Device Dissipation 1000 350 mW D Derate Above 25 C 8.0 2.8 mW/ C Thermal Resistance, JunctiontoAmbient 125 357 R C/W JA 3. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 2 4. Device mounted on FR4 PCB 36 mm x 18 mm x 1.5 mm mounting pad for the collector lead minimum 6cm . ELECTRICAL CHARACTERISTICS (Note 5) (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Max Unit V CollectorEmitter Breakdown Voltage I = 100 A, V = 0 80 V (BR)CES C BE V CollectorBase Breakdown Voltage 80 V I = 100 A, I = 0 (BR)CBO C E V EmitterBase Breakdown Voltage I = 10 A, I = 0 12 V (BR)EBO E C I Collector CutOff Current V = 60 V, I = 0 100 nA CBO CB E I Collector CutOff Current V = 60 V, V = 0 500 nA CES CE BE I Emitter CutOff Current V = 10 V, I = 0 100 nA EBO EB C h DC Current Gain I = 10 mA, V = 5.0 V 10000 FE C CE I = 100 mA, V = 5.0 V 10000 C CE V (sat) CollectorEmitter Saturation Voltage I = 10 mA, I = 0.01 mA 1.2 V CE C B I = 100 mA, I = 0.1 mA 1.5 C B V BaseEmitter On Voltage I = 100 mA, V = 5.0 V 2.0 V BE(on) C CE f Current Gain Bandwidth Product I = 15 mA, V = 5.0 V, f = 100 MHz 125 MHz T C CE C Output Capacitance V = 1.0 V, I = 0, f = 1.0 MHz 8.0 pF obo CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse test: pulse width 300 s, duty cycle 2.0%. www.onsemi.com 2
