Product Information

Jantx2N6284

Jantx2N6284 electronic component of Microchip

Datasheet
Darlington Transistors NPN Darlington Transistor

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 54.5399 ea
Line Total: USD 54.54

1 - Global Stock
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Mon. 20 May to Fri. 24 May
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Pack Size: 1
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Jantx2N6284
Microchip

1 : USD 54.5399

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Jantx2N6284
Microchip

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Microchip

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Jantx2N6284
Microchip

1 : USD 75.2898
2 : USD 72.1586
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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2N6283 and 2N6284 Qualified Levels: JAN, JANTX, and NPN Darlington Power Silicon Transistor Available on JANTXV commercial Qualified per MIL-PRF-19500/504 versions DESCRIPTION This high speed NPN transistor is rated at 20 amps and is military qualified up to a JANTXV level. This TO-204AA isolated package features a 180 degree lead orientation. Important: For the latest information, visit our website 2N6283 and 2N6284 MECHANICAL and PACKAGING CASE: Industry standard TO-204AA (TO-3), hermetically sealed, 0.040 inch diameter pins FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating. Solderable per MIL-STD-750 method 2026. POLARITY: NPN (see schematic) MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screws WEIGHT: Approximately 15 grams See package dimensions on last page. PART NOMENCLATURE JAN 2N6283 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS Compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS Compliant Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Base current: The value of the dc current into the base terminal. I B Collector current: The value of the dc current into the collector terminal. I C Emitter current: The value of the dc current into the emitter terminal. I E T Case temperature: The temperature measured at a specified location on the case of a device. C Collector-base voltage: The dc voltage between the collector and the base. V CB Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is V CBO open-circuited. V Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. CC V Collector-emitter voltage: The dc voltage between the collector and the emitter. CE Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base V CEO terminal is open-circuited. V Emitter-base voltage: The dc voltage between the emitter and the base EB Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal V EBO open-circuited. T4-LDS-0308, Rev. 1 (9/4/13) 2013 Microsemi Corporation Page 2 of 9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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