X-On Electronics has gained recognition as a prominent supplier of 2N6039G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2N6039G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2N6039G ON Semiconductor

2N6039G electronic component of ON Semiconductor
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See Product Specifications
Part No.2N6039G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Darlington Transistors 4A 80V Bipolar Power NPN
Datasheet: 2N6039G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 0.3535
10 : USD 0.3381
100 : USD 0.3313
500 : USD 0.3313
1000 : USD 0.3313
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MOQ : 1
Multiples : 1
1 : USD 1.3718
10 : USD 1.1643
100 : USD 0.8924
500 : USD 0.7055
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MOQ : 1
Multiples : 1
1 : USD 0.6906
10 : USD 0.5905
25 : USD 0.5554
100 : USD 0.4033
500 : USD 0.337
1000 : USD 0.2863
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MOQ : 40
Multiples : 40
40 : USD 0.7012
50 : USD 0.6731
200 : USD 0.6731
750 : USD 0.6731
2500 : USD 0.6731
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MOQ : 1288
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1288 : USD 0.2532
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1 : USD 0.7312
10 : USD 0.624
100 : USD 0.4331
500 : USD 0.3654
1000 : USD 0.3151
2500 : USD 0.2966
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MOQ : 1
Multiples : 1
1 : USD 1.9233
10 : USD 0.9314
100 : USD 0.5193
500 : USD 0.4092
1000 : USD 0.3281
2000 : USD 0.3088
6000 : USD 0.2992
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MOQ : 3
Multiples : 1
3 : USD 0.5056
10 : USD 0.4478
25 : USD 0.4044
45 : USD 0.3322
122 : USD 0.3178
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MOQ : 20
Multiples : 1
20 : USD 0.3522
100 : USD 0.3313
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the 2N6039G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6039G and other electronic components in the Darlington Transistors category and beyond.

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2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mAdc, I = 0) C B 2N6034G 40 2N6035G, 2N6038G 60 2N6036G, 2N6039G 80 CollectorCutoff Current I A CEO (V = 40 Vdc, I = 0) CE B 2N6034G 100 (V = 60 Vdc, I = 0) CE B 2N6035G, 2N6038G 100 (V = 80 Vdc, I = 0) CE B 2N6036G, 2N6039G 100 CollectorCutoff Current I A CEX (V = 40 Vdc, V = 1.5 Vdc) CE BE(off) 2N6034G 100 (V = 60 Vdc, V = 1.5 Vdc) CE BE(off) 2N6035G, 2N6038G 100 (V = 80 Vdc, V = 1.5 Vdc) CE BE(off) 2N6036G, 2N6039G 100 (V = 40 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 2N6034G 500 (V = 60 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 2N6035G, 2N6038G 500 (V = 80 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 500 2N6036G, 2N6039G CollectorCutoff Current I mAdc CBO (V = 40 Vdc, I = 0) CB E 2N6034G 0.5 (V = 60 Vdc, I = 0) CB E 2N6035G, 2N6038G 0.5 (V = 80 Vdc, I = 0) CB E 2N6036G, 2N6039G 0.5 EmitterCutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 0.5 Adc, V = 3.0 Vdc) 500 C CE (I = 2.0 Adc, V = 3.0 Vdc) 750 15,000 C CE (I = 4.0 Adc, V = 3.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 2.0 Adc, I = 8.0 mAdc) C B 2.0 (I = 4.0 Adc, I = 40 mAdc) C B 3.0 BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 4.0 Adc, I = 40 mAdc) 4.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 2.0 Adc, V = 3.0 Vdc) 2.8 C CE DYNAMIC CHARACTERISTICS SmallSignal CurrentGain h 25 fe (I = 0.75 Adc, V = 10 Vdc, f = 1.0 MHz) C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) CB E 2N6034G, 2N6035G, 2N6036G 200 2N6038G, 2N6039G 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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