X-On Electronics has gained recognition as a prominent supplier of 2N6040G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2N6040G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2N6040G ON Semiconductor

2N6040G electronic component of ON Semiconductor
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See Product Specifications
Part No.2N6040G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Darlington Transistors 8A 60V Bipolar Power PNP
Datasheet: 2N6040G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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MOQ : 1650
Multiples : 1
1650 : USD 0.4213
2500 : USD 0.3928
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MOQ : 1
Multiples : 1
1 : USD 1.2083
10 : USD 1.0416
100 : USD 0.8122
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MOQ : 1
Multiples : 1
1 : USD 1.2364
10 : USD 1.066
50 : USD 1.013
100 : USD 0.8316
500 : USD 0.6857
1000 : USD 0.5436
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MOQ : 40
Multiples : 40
40 : USD 0.3037
125 : USD 0.2916
400 : USD 0.2916
1250 : USD 0.2916
4000 : USD 0.2916
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MOQ : 1000
Multiples : 50
1000 : USD 0.3613
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MOQ : 1
Multiples : 1
1 : USD 2.835
10 : USD 1.0676
50 : USD 0.9709
100 : USD 0.797
500 : USD 0.6588
1000 : USD 0.5227
2500 : USD 0.5065
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.3973
3 : USD 0.9243
10 : USD 0.7605
23 : USD 0.6084
63 : USD 0.585
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0
MOQ : 17
Multiples : 1
17 : USD 0.461
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MOQ : 15
Multiples : 1
15 : USD 0.5337
50 : USD 0.4533
100 : USD 0.4398
500 : USD 0.431
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N6040G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6040G and other electronic components in the Darlington Transistors category and beyond.

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PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com Plastic mediumpower complementary silicon transistors are designed for generalpurpose amplifier and lowspeed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain h = 2500 (Typ) I = 4.0 Adc FE C 60 100 VOLTS, 75 WATTS CollectorEmitter Sustaining Voltage 100 mAdc V = 60 Vdc (Min) 2N6040, 2N6043 CEO(sus) = 100 Vdc (Min) 2N6042, 2N6045 Low CollectorEmitter Saturation Voltage V = 2.0 Vdc (Max) I = 4.0 Adc 2N6043,44 CE(sat) C = 2.0 Vdc (Max) I = 3.0 Adc 2N6042, 2N6045 C Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors Epoxy Meets UL 94 V0 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V TO220 These Devices are PbFree and are RoHS Compliant* CASE 221A STYLE 1 MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit MARKING DIAGRAM CollectorEmitter Voltage 2N6040 V 60 Vdc CEO 2N6043 2N6042 100 2N6045 CollectorBase Voltage 2N6040 V 60 Vdc CB 2N6043 2N6042 100 2N604xG 2N6045 AYWW EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 8.0 Adc C Peak 16 Base Current I 120 mAdc B Total Power Dissipation T = 25C P 75 W 2N604x = Device Code C D Derate above 25C 0.60 W/C x = 0, 2, 3, or 5 A = Assembly Location Operating and Storage Junction T , T 65 to +150 C J stg Y = Year Temperature Range WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the G = PbFree Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 10 2N6040/DPNP 2N6040, 2N6042, NPN 2N6043, 2N6045 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase 1.67 C/W JC Thermal Resistance, JunctiontoAmbient 57 C/W JA *ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mAdc, I = 0) 2N6040, 2N6043 C B 60 2N6042, 2N6045 100 Collector Cutoff Current I A CEO (V = 60 Vdc, I = 0) 2N6040, 2N6043 CE B 20 (V = 100 Vdc, I = 0) 2N6042, 2N6045 CE B 20 Collector Cutoff Current I A CEX (V = 60 Vdc, V = 1.5 Vdc) 2N6040, 2N6043 CE BE(off) 20 (V = 100 Vdc, V = 1.5 Vdc) 2N6042, 2N6045 CE BE(off) 20 (V = 60 Vdc, V = 1.5 Vdc, T = 150C) 2N6040, 2N6043 CE BE(off) C 200 (V = 80 Vdc, V = 1.5 Vdc, T = 150C) 2N6041, 2N6044 CE BE(off) C 200 (V = 100 Vdc, V = 1.5 Vdc, T = 150C) 2N6042, 2N6045 CE BE(off) C 200 Collector Cutoff Current I A CBO (V = 60 Vdc, I = 0) 2N6040, 2N6043 20 CB E (V = 100 Vdc, I = 0) 2N6042, 2N6045 CB E 20 Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 2.0 mAdc BE C EBO ON CHARACTERISTICS DC Current Gain h FE (I = 4.0 Adc, V = 4.0 Vdc) 2N6040, 2N6043, C CE 1000 20.000 (I = 3.0 Adc, V = 4.0 Vdc) 2N6042, 2N6045 C CE 1000 20,000 (I = 8.0 Adc, V = 4.0 Vdc) All Types C CE 100 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 4.0 Adc, I = 16 mAdc) 2N6040, 2N6043, C B 2.0 (I = 3.0 Adc, I = 12 mAdc) 2N6042, 2N6045 C B 2.0 (I = 8.0 Adc, I = 80 Adc) All Types C B 4.0 BaseEmitter Saturation Voltage (I = 8.0 Adc, I = 80 mAdc) V 4.5 Vdc C B BE(sat) BaseEmitter On Voltage (I = 4.0 Adc, V = 4.0 Vdc) V 2.8 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS Small Signal Current Gain (I = 3.0 Adc, V = 4.0 Vdc, f = 1.0 MHz) h 4.0 C CE fe Output Capacitance 2N6040/2N6042 C 300 pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 2N6043/2N6045 200 CB E SmallSignal Current Gain (I = 3.0 Adc, V = 4.0 Vdc, f = 1.0 kHz) h 300 C CE fe Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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