X-On Electronics has gained recognition as a prominent supplier of JAN2N6301 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. JAN2N6301 Darlington Transistors are a product manufactured by Microchip. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

JAN2N6301 Microchip

JAN2N6301 electronic component of Microchip
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See Product Specifications
Part No.JAN2N6301
Manufacturer: Microchip
Category: Darlington Transistors
Description: Trans Darlington NPN 80V 8A 3-Pin(2+Tab) TO-66
Datasheet: JAN2N6301 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.5241 ea
Line Total: USD 8.52 
Availability - 2517
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2517
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 8.5241

2517
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 8.5241

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JAN2N6301 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JAN2N6301 and other electronic components in the Darlington Transistors category and beyond.

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2N6300 and 2N6301 Qualified Levels: NPN Darlington Power Silicon Transistor JAN, JANTX, and Available Qualified per MIL-PRF-19500/539 JANTXV DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTXV level. This TO-213AA isolated package features a 180 degree lead orientation. TO-213AA (TO-66) Package Important: For the latest information, visit our website 2N6300 and 2N6301 MECHANICAL and PACKAGING CASE: Hermetic, TO-213AA package. Nickel plate with nickel cap. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available on commercial grade only. MARKING: MSC, part number, date code, polarity symbol WEIGHT: Approximately 5.7 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6300 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS Compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS Compliant Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Base current: The value of the dc current into the base terminal. I B I Collector current: The value of the dc current into the collector terminal. C Emitter current: The value of the dc current into the emitter terminal. I E T Case temperature: The temperature measured at a specified location on the case of a device. C V Collector-base voltage: The dc voltage between the collector and the base. CB Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is V CBO open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. V CC Collector-emitter voltage: The dc voltage between the collector and the emitter. V CE Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base V CEO terminal is open-circuited. Emitter-base voltage: The dc voltage between the emitter and the base V EB Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal V EBO open-circuited. T4-LDS-0171, Rev. 2 (11/18/13) 2013 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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