X-On Electronics has gained recognition as a prominent supplier of JAN2N6351 across the USA, India, Europe, Australia, and various other global locations. JAN2N6351 are a product manufactured by Microchip. We provide cost-effective solutions for JAN2N6351, ensuring timely deliveries around the world.

JAN2N6351 Microchip

JAN2N6351 electronic component of Microchip
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Part No.JAN2N6351
Manufacturer: Microchip
Category: Unclassified
Description: n/a
2N6351 is a N-channel enhancement MOSFET with 400V blocking voltage capability.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 729.8348 ea
Line Total: USD 729.83 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 729.8348
25 : USD 456.1428

   
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We are delighted to provide the JAN2N6351 from our Microchip manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JAN2N6351 and other electronic components in the Microchip manufacturer and beyond.

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The JAN2N6351 is a model number identifying a NPN epitaxial base silicon transistor manufactured by Microchip. The transistor has a collector-emitter voltage of 20V and a maximum collector current of 0.5A, making it suitable for use in power amplifying applications. It has a gain-bandwidth product of 200MHz and is made for use as a general-purpose transistor.

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