140 COMMERCE DRIVE MONTGOMERYVILLE, PA - PHONE: (215) 631 - FAX: (215) 631 - BFY90 RF & MICROWAVE DISCRETE Features Silicon NPN, To - 72 packaged VHF/UHF Transistor Low Noise, 2.5 dB (typ) 500 MHz, 5v, 2.0 mA, 1.3 GHz Current - Gain Bandwidth Product 25mA IC 2 1. Emitter 2. Base 1 3 3. Collector 4 Power Gain, G = 19 dB (typ) 200 MHz 4. Case TO - 72 DESCRIPTION: Silicon NPN transistor , designed for VHF/UHF equipment. Applications include low noise amplifier oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Parameter Unit V Collector - Emitter Voltage c V Collector - V Emitter - 2.5 EBO I mA C Thermal Data P mWatts Total Device Dissipation T = 25 C A D 1.14 mW/ C C or contact our factory directADVANCEDPOWER.COM WWW Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Derate above 25 200 50 Collector Current Vdc Base Voltage CBO Vdc 30 Base Voltage CEO Vd 15 Value Symbol PE LOW POWER TRANSISTORS 9855 9840 1013 36 189 BFY90 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Unit Min. Max. Collector - (IC = 10 mAdc, IB = 0) - - ICBO Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) - - (on) DC Current Gain (IC = 25 mAdc, VCE = 1.0 Vdc) - - DYNAMIC Unit Min. Max. f - Gain - Bandwidth Product T (IC = 25 mAdc, VCE = 5 Vdc, f = 500 MHz) 1.3 - - NF min (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 500 MHz - 2.5 5.0 Emitter - (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) - - 2.0 or contact our factory directADVANCEDPOWER.COM WWW Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein pF Base Capacitance Cibo dB GHz Current Typ. Test Conditions Symbol Value 125 20 HFE nA 10 Vdc 15 Emitter Breakdown Voltage BVCEO Typ. Test Conditions Symbol Value
