BLV33 Advanced Semiconductor

BLV33 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The is a Common Emitter ASI BLV33 Device Designed for Class A PACKAGE STYLE .500 4L STUD Television Applications. FEATURES INCLUDE: Gold Metalization Emitter Ballasting MAXIMUM RATINGS I 12.5 A C V 65 V CESM V 33 V CEO P 132 W T = 25 C C DISS T -65 C to +200 C J 1 = COLLECTOR 2 & 4 = EMITTER T -65 C to +150 C STG 3 = BASE 1.5 C/W JC ORDER CODE: ASI10498 CHARACTERISTICS TC = 25C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV I = 100 mA 33 V CEO C BV I = 25 mA 65 V CES C BV I = 10 mA 4.0 V EBO E I V = 30 V 10 mA CES CE h V = 25 V I = 3.0 A 15 100 --- FE CE C V = 25 V f = 1.0 MHz C 155 CB c V = 25 V I = 100 mA f = 1.0 MHz C CE C 88 pF re V = 25 V I = 100 mA f = 1.0 MHz CE C C 3.0 cs V = 25 V I = 3.0 A 680 CB E f MHz T V = 25 V I = 6.0 A CB E 750 G V = 25 V I = 3.2 A P = 19 W 9.0 9.7 --- P CE C out f = 224.25 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/3 Specifications are subject to change without notice. BLV33 LERROR REFERENCE SOURCE NOT FOUND. Fig. 1 Intermodulation distortion (d ) and power Fig. 2 Cross-modulation distortion (d ) as im cm gain as a function of output power. a function of output power. Conditions for fig. 1 and 2: Typical values V = 25 V I = 3.2 A T = 25C T = 70C f = 224.25 MHz. CE C h h vision A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 2/3 Specifications are subject to change without notice.