BLX15 Advanced Semiconductor

ASI BLX15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The is a Common Emitter ASI BLX15 Device Designed for High Linearity PACKAGE STYLE .550 4L STUD Class A/AB HF Applications. FEATURES INCLUDE: Gold Metalization Emitter Ballasting MAXIMUM RATINGS I 10 A C 110 V V CB O 233 W T = 25 C P DISS C O O -55 C to +200 C T J O O -55 C to +200 C T STG 1 = COLLECTOR 2 & 4 = EMITTER O 3 = BASE 0.75 C/W JC O CHARACTERISTICS T = 25 C C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV I = 100 mA 55 V CEO C BV I = 100 mA 110 V CBO C BV I = 10 mA 4.0 V EBO E h V = 6.0 V I = 1.4 A 15 50 --- FE CE C P dB 14 --- --- g V = 50 V I = 100 mA CE cq IMD --- -37 -30 dBc 3 P = 150 W(PEP) f = 30 MHz out 37 45 --- % C C pF V = 50 V f = 1.0 MHz 220 ob CB A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1 Specifications are subject to change without notice.X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for RF Bipolar Transistors category: Click to view products by Advanced Semiconductor manufacturer: Other Similar products are found below : MAPRST0912-50 MCH4016-TL-H MMBT5551-G MRF10120 15GN01CA-TB-E PH1214-25M MAPRST0912-350 MMBTH10-TP BFP 640F H6327 BFP 720F H6327 BFP 740F H6327 BFR 360F H6765 MRF10031 NSVF4009SG4T1G BFP 182R E7764 BFP405H6740XTSA1 MRF10350 BFR360FH6765XTSA1 BFP410H6327XTSA1 BFP620FH7764XTSA1 BFP720ESDH6327XTSA1 BFP720FH6327XTSA1 BFR360L3E6765XTMA1 BFP420H6433XTMA1 BFP420H6740XTSA1 BFP420H6801XTSA1 MCH4015-TL-H BF888H6327XTSA1 MMBT2222A-G BFP196WH6327XTSA1 BFP405FH6327XTSA1 BFP640ESDH6327XTSA1 BFR193L3E6327XTMA1 BFS483H6327XTSA1 NSVF4020SG4T1G NSVF6003SB6T1G MRF10005 BFP420FH6327XTSA1 BFP740FESDH6327XTSA1 BFR181E6327HTSA1 BFR181WH6327XTSA1 BFR182E6327HTSA1 BFR193E6327HTSA1 BFP181E7764HTSA1 BFP183WH6327XTSA1 BFP720H6327XTSA1 BFR182WH6327XTSA1 BFU590GX MAPR-000912-500S00 BFR340FH6327XTSA1