X-On Electronics has gained recognition as a prominent supplier of BFU530XRR RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFU530XRR RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFU530XRR NXP

BFU530XRR electronic component of NXP
BFU530XRR NXP
BFU530XRR RF Bipolar Transistors
BFU530XRR  Semiconductors

Images are for reference only
See Product Specifications
Part No. BFU530XRR
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Datasheet: BFU530XRR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4035 ea
Line Total: USD 2.02 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 5
Multiples : 1
5 : USD 0.4035
10 : USD 0.3339
100 : USD 0.2783
500 : USD 0.2228
1000 : USD 0.1673
5000 : USD 0.1502

0
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 0.3375
10 : USD 0.3325
100 : USD 0.3048
3000 : USD 0.1331
9000 : USD 0.132
24000 : USD 0.132
45000 : USD 0.132

   
Manufacturer
Product Category
Series
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Rohs Mouser
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Operating Temperature Range
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFU530XRR from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFU530XRR and other electronic components in the RF Bipolar Transistors category and beyond.

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BFU530XR NPN wideband silicon RF transistor Rev. 1 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NF ) = 0.65 dB at 900 MHz min Maximum stable gain 21 dB at 900 MHz 11 GHz f silicon technology T 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit collector-base voltage open emitter - - 24 V V CB collector-emitter voltage open base - - 12 V V CE shorted base - - 24 V emitter-base voltage open collector - - 2 V V EB collector current - 10 40 mA I C 1 total power dissipation T 87 C -- 450 mW P tot sp DC current gain I =10 mA V =8V 60 95 200 h FE C CE collector capacitance V =8V f = 1MHz - 0.36 - pF C c CB transition frequency I =15 mA V = 8 V f = 900 MHz - 11 - GHz f T C CEBFU530XR NXP Semiconductors NPN wideband silicon RF transistor Table 1. Quick reference data continued T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit 2 G maximum power gain I =10 mA V = 8 V f = 900 MHz -21 - dB p(max) C CE NF minimum noise figure I =1 mA V = 8 V f = 900 MHz = -0.65- dB min C CE S opt P output power at 1 dB gain I =15 mA V =8V Z =Z =50 - 10.5 - dBm L(1dB) C CE S L compression f=900MHz 1 T is the temperature at the solder point of the collector lead. sp 2 If K > 1 then G is the maximum power gain. If K 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1 collector 2emitter 3base 4emitter DDD 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU530XR - plastic surface-mounted package reverse pinning 4 leads SOT143R 1 - OM7964 - Customer evaluation kit for BFU520XR, BFU530XR and BFU550XR 1 The customer evaluation kit contains the following: a) Unpopulated RF amplifier Printed-Circuit Board (PCB) b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) d) BFU520XR, BFU530XR and BFU550XR samples e) USB stick with data sheets, application notes, models, S-parameter and noise files 4. Marking Table 4. Marking Type number Marking Description BFU530XR *TK * = t : made in Malaysia * = w : made in China BFU530XR All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 1 5 March 2014 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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