BFU550XAR NXP

BFU550X NPN wideband silicon RF transistor Rev. 2 12 April 2019 Product data sheet 1 Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual- emitter SOT143B package. The BFU550X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NF ) = 0.75 dB at 900 MHz min Maximum stable gain 21.5 dB at 900 MHz 11 GHz f silicon technology T 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1.Quick reference data T = 25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 24 V CB V collector-emitter voltage open base - - 12 V CE shorted base - - 24 V V emitter-base voltage open collector - - 2 V EB I collector current - 15 50 mA C 1 P total power dissipation T 87 C - - 450 mW tot sp h DC current gain I = 15 mA V = 8 V 60 95 200 FE C CE C collector capacitance V = 8 V f = 1 MHz - 0.72 - pF c CB f transition frequency I = 25 mA V = 8 V f = 900 MHz - 11 - GHz T C CE SOT143BNXP Semiconductors BFU550X NPN wideband silicon RF transistor Symbol Parameter Conditions Min Typ Max Unit 2 G maximum power gain I = 15 mA V = 8 V f = 900 MHz - 21.5 - dB p(max) C CE NF minimum noise figure I = 1 mA V = 8 V f = 900 MHz = - 0.75 - dB min C CE S opt P output power at 1 dB gain I = 25 mA V = 8 V Z = Z = 50 f = 900 - 13.5 - dBm L(1dB) C CE S L compression MHz 1 T is the temperature at the solder point of the collector lead. sp 2 If K > 1 then G is the maximum power gain. If K < 1 then G = MSG. p(max) p(max) 2 Pinning information Table 2.Discrete pinning Pin Description Simplified outline Graphic symbol 1 collector 4 3 1 2 emitter 3 3 base 4 emitter 2, 4 1 2 aaa-010457 3 Ordering information Table 3.Ordering information Type number Package Name Description Version BFU550X - plastic surface-mounted package 4 leads SOT143B 1 OM7963 - Customer evaluation kit for BFU520X, BFU530X and BFU550X - 1 The customer evaluation kit contains the following: Unpopulated RF amplifier Printed-Circuit Board (PCB) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) BFU520X, BFU530X and BFU550X samples USB stick with data sheets, application notes, models, S-parameter and noise files 4 Marking Table 4.Marking Type number Marking Description BFU550X *TG * = t : made in Malaysia * = w : made in China BFU550X All information provided in this document is subject to legal disclaimers. NXP B.V. 2019. All rights reserved. Product data sheet Rev. 2 12 April 2019 2 / 21