X-On Electronics has gained recognition as a prominent supplier of BFU550XAR RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFU550XAR RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFU550XAR NXP

BFU550XAR electronic component of NXP
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Part No.BFU550XAR
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Datasheet: BFU550XAR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6118 ea
Line Total: USD 0.61 
Availability - 22888
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2890
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4283
10 : USD 0.3425
30 : USD 0.2995
100 : USD 0.2673
500 : USD 0.2415
1000 : USD 0.2284

22888
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6118
10 : USD 0.4623
100 : USD 0.3645
500 : USD 0.3266
1000 : USD 0.2346
3000 : USD 0.2185
9000 : USD 0.2185
24000 : USD 0.2162
45000 : USD 0.2139

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Operating Temperature Range
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFU550XAR from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFU550XAR and other electronic components in the RF Bipolar Transistors category and beyond.

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BFU550X NPN wideband silicon RF transistor Rev. 2 12 April 2019 Product data sheet 1 Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual- emitter SOT143B package. The BFU550X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NF ) = 0.75 dB at 900 MHz min Maximum stable gain 21.5 dB at 900 MHz 11 GHz f silicon technology T 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1.Quick reference data T = 25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 24 V CB V collector-emitter voltage open base - - 12 V CE shorted base - - 24 V V emitter-base voltage open collector - - 2 V EB I collector current - 15 50 mA C 1 P total power dissipation T 87 C - - 450 mW tot sp h DC current gain I = 15 mA V = 8 V 60 95 200 FE C CE C collector capacitance V = 8 V f = 1 MHz - 0.72 - pF c CB f transition frequency I = 25 mA V = 8 V f = 900 MHz - 11 - GHz T C CE SOT143BNXP Semiconductors BFU550X NPN wideband silicon RF transistor Symbol Parameter Conditions Min Typ Max Unit 2 G maximum power gain I = 15 mA V = 8 V f = 900 MHz - 21.5 - dB p(max) C CE NF minimum noise figure I = 1 mA V = 8 V f = 900 MHz = - 0.75 - dB min C CE S opt P output power at 1 dB gain I = 25 mA V = 8 V Z = Z = 50 f = 900 - 13.5 - dBm L(1dB) C CE S L compression MHz 1 T is the temperature at the solder point of the collector lead. sp 2 If K > 1 then G is the maximum power gain. If K < 1 then G = MSG. p(max) p(max) 2 Pinning information Table 2.Discrete pinning Pin Description Simplified outline Graphic symbol 1 collector 4 3 1 2 emitter 3 3 base 4 emitter 2, 4 1 2 aaa-010457 3 Ordering information Table 3.Ordering information Type number Package Name Description Version BFU550X - plastic surface-mounted package 4 leads SOT143B 1 OM7963 - Customer evaluation kit for BFU520X, BFU530X and BFU550X - 1 The customer evaluation kit contains the following: Unpopulated RF amplifier Printed-Circuit Board (PCB) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) BFU520X, BFU530X and BFU550X samples USB stick with data sheets, application notes, models, S-parameter and noise files 4 Marking Table 4.Marking Type number Marking Description BFU550X *TG * = t : made in Malaysia * = w : made in China BFU550X All information provided in this document is subject to legal disclaimers. NXP B.V. 2019. All rights reserved. Product data sheet Rev. 2 12 April 2019 2 / 21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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