X-On Electronics has gained recognition as a prominent supplier of BFY450 (P) RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFY450 (P) RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFY450 (P) Infineon

BFY450 (P) electronic component of Infineon
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Part No.BFY450 (P)
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: Infineon Technologies RF Bipolar Transistors HiRel NPN Silicon RF Transistor
Datasheet: BFY450 (P) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 427.3778
5 : USD 415.9724
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Height
Length
Width
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFY450 (P) from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFY450 (P) and other electronic components in the RF Bipolar Transistors category and beyond.

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BFY450 HiRel NPN Silicon RF Transistor 4 3 HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz 1 2 Hermetically sealed microwave package Transition Frequency f = 20 GHz T SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor- 25 GHz f -Line T Space Qualified ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 03 ESD: Electrostatic discharge sensitive device, observe handling precautions Type Marking Ordering Code Pin Configuration Package 1 2 3 4 BFY450 (ql) - see below C E B E Micro-X (ql) Quality Level: P: Professional Quality ES: ESA Space Quality (see order instructions for ordering example) IFAG PMM RFS D HIR 1 of 4 V3, June 2016 BFY450 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V 4.5 V CEO Collector-base voltage V 15 V CBO Emitter-base voltage V 1.5 V EBO Collector current I 100 mA C Base current I 10 mA B Total power dissipation, P 450 mW tot 1), 2) T 110C S Junction temperature T 175 j C Operating temperature range T -65...+175 C op Storage temperature range T -65...+175 C stg Thermal Resistance 2) R K/W < 145 Junction-soldering point th JS Notes.: 1) At T = + 110 C. For T > + 110 C derating is required. S S 2) T is measured on the collector lead at the soldering point to the pcb. S Electrical Characteristics at T =25C unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-base cutoff current I - - 100 nA CBO V = 5 V, I = 0 CB E 1.) Collector-emitter cutoff current I - - 200 A CEX V = 4.5 V, I = 1.0A (t.b.d.) CE B Emitter-base cuttoff current I - - 50 A EBO V = 1.5 V, I = 0 EB C DC current gain h 50 90 150 - FE I = 20 mA, V = 1 V C CE Notes: 1.) This Test assures V(BR)CE0 > 4.5V IFAG PMM RFS D HIR 2 of 4 V3, June 2016

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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