BFY450 (P) Infineon

BFY450 HiRel NPN Silicon RF Transistor 4 3 HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz 1 2 Hermetically sealed microwave package Transition Frequency f = 20 GHz T SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor- 25 GHz f -Line T Space Qualified ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 03 ESD: Electrostatic discharge sensitive device, observe handling precautions Type Marking Ordering Code Pin Configuration Package 1 2 3 4 BFY450 (ql) - see below C E B E Micro-X (ql) Quality Level: P: Professional Quality ES: ESA Space Quality (see order instructions for ordering example) IFAG PMM RFS D HIR 1 of 4 V3, June 2016 BFY450 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V 4.5 V CEO Collector-base voltage V 15 V CBO Emitter-base voltage V 1.5 V EBO Collector current I 100 mA C Base current I 10 mA B Total power dissipation, P 450 mW tot 1), 2) T 110C S Junction temperature T 175 j C Operating temperature range T -65...+175 C op Storage temperature range T -65...+175 C stg Thermal Resistance 2) R K/W < 145 Junction-soldering point th JS Notes.: 1) At T = + 110 C. For T > + 110 C derating is required. S S 2) T is measured on the collector lead at the soldering point to the pcb. S Electrical Characteristics at T =25C unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-base cutoff current I - - 100 nA CBO V = 5 V, I = 0 CB E 1.) Collector-emitter cutoff current I - - 200 A CEX V = 4.5 V, I = 1.0A (t.b.d.) CE B Emitter-base cuttoff current I - - 50 A EBO V = 1.5 V, I = 0 EB C DC current gain h 50 90 150 - FE I = 20 mA, V = 1 V C CE Notes: 1.) This Test assures V(BR)CE0 > 4.5V IFAG PMM RFS D HIR 2 of 4 V3, June 2016