X-On Electronics has gained recognition as a prominent supplier of MRF422 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. MRF422 RF Bipolar Transistors are a product manufactured by MACOM. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

MRF422 MACOM

MRF422 electronic component of MACOM
MRF422 MACOM
MRF422 RF Bipolar Transistors
MRF422  Semiconductors

Images are for reference only
See Product Specifications
Part No. MRF422
Manufacturer: MACOM
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors 2-30MHz 150Watts 28Volt Gain 10dB
Datasheet: MRF422 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 129.602 ea
Line Total: USD 129.6 
Availability - 173
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
173
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ : 1
Multiples : 1
1 : USD 129.602
10 : USD 118.976

   
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We are delighted to provide the MRF422 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF422 and other electronic components in the RF Bipolar Transistors category and beyond.

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MRF422 The RF Line NPN Silicon Power Transistor Rev. V1 150W(PEP), 30MHz, 28V Designed primarily for applications as a high power linear amplifier from 2.0 Product Image to 30 MHz. Specified 28 V, 30 MHz characteristics Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40% Intermodulation distortion 150 W (PEP) IMD = 30 dB (min.) 100% tested for load mismatch at all phase angles with 30:1 VSWR CASE 211 11, STYLE 1 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MRF422 The RF Line NPN Silicon Power Transistor Rev. V1 150W(PEP), 30MHz, 28V 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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M/A-COM
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MA/COM
MACOM
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