X-On Electronics has gained recognition as a prominent supplier of BFU730LXZ RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFU730LXZ RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFU730LXZ NXP

BFU730LXZ electronic component of NXP
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Part No.BFU730LXZ
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: NXP Semiconductors RF Bipolar Transistors SiGe:C MMIC Transistor
Datasheet: BFU730LXZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5203 ea
Line Total: USD 0.52 
Availability - 5413
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5413
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5203
10 : USD 0.3575
100 : USD 0.2519
500 : USD 0.2211
1000 : USD 0.1903
2500 : USD 0.176
10000 : USD 0.1727
20000 : USD 0.1683

   
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Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
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Configuration
Output Power
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFU730LXZ from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFU730LXZ and other electronic components in the RF Bipolar Transistors category and beyond.

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BFU730LX & 7 2 6 NPN wideband silicon germanium RF transistor Rev. 1 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Leadless ultra small plastic SMD package 1.0 mm 0.6 mm 0.34 mm Low noise high gain microwave transistor Noise figure (NF) = 0.75 dB at 6 GHz High maximum power gain (G ) of 15.8 dB at 6 GHz p(max) Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz: input third-order intercept point (IP3 ) = 15 dBm i input power at 1 dB gain compression (P ) = 0 dBm i(1dB) See application note AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX. 110 GHz f silicon germanium technology T 1.3 Applications Wi-Fi / WLAN See application notes: AN11223: Low Noise Fast Turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730LX AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX WiMAX LNA for GPS, GLONASS, Galileo and Compass (BeiDou) DBS (2nd LNA stage, mixer stage, DRO), SDARS RKE, AMR / Zigbee LNA for microwave communications systems Low current battery equipped applications Microwave driver / buffer applicationsBFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10.0 V CB V collector-emitter voltage open base - - 3.0 V CE shorted base - - 10.0 V V emitter-base voltage open collector - - 1.3 V EB I collector current - 5 30 mA C 1 P total power dissipation T 110 C - - 160 mW tot sp h DC current gain I =2mA V =2V 205 380 555 FE C CE T =25 C j f transition frequency I =25mA V =3V -53 - GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =25mA V =3V - 15.8 - dB p(max) C CE f= 6GHz T =25 C amb NF noise figure I =5mA V =3V f=6 -0.75 - dB C CE GHz = S opt P output power at 1 dB I =25mA V =3V -11.7 - dBm L(1dB) C CE gain compression Z =Z =50 S L f= 1.8GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1base 2 collector 3emitter DUVSWUDQHQ 7 Z WRS YLH DDD 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU730LX - leadless ultra small plastic package 3 terminals SOT883C body 1 0.6 0.34 mm BFU730LX All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Product data sheet Rev. 1 8 May 2013 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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