X-On Electronics has gained recognition as a prominent supplier of BFU760F,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFU760F,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFU760F,115 NXP

BFU760F,115 electronic component of NXP
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Part No.BFU760F,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar NPN WIDEBAND SILICON GERMANIUM RF TRANS
Datasheet: BFU760F,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5665 ea
Line Total: USD 0.57 
Availability - 108572
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1455
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 53
Multiples : 1
53 : USD 0.6175
75 : USD 0.546
300 : USD 0.4875
1500 : USD 0.4225

108572
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5665
10 : USD 0.4235
100 : USD 0.297
500 : USD 0.2409
1000 : USD 0.2211
3000 : USD 0.1881
9000 : USD 0.1826
24000 : USD 0.1815

   
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RoHS - XON
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
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We are delighted to provide the BFU760F,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFU760F,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFU760F NPN wideband silicon germanium RF transistor Rev. 1 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high linearity RF transistor High maximum output third-order intercept point 32 dBm at 1.8 GHz 110 GHz f silicon germanium technology T 1.3 Applications Ka band oscillators DROs High linearity applications Medium output power applications Wi-Fi / WLAN / WiMAX GPS ZigBee SDARS first stage LNA LTE, cellular, UMTSBFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10 V CBO V collector-emitter voltage open base - - 2.8 V CEO V emitter-base voltage open collector - - 1.0 V EBO I collector current - 25 70 mA C 1 P total power dissipation T 90 C - - 220 mW tot sp h DC current gain I =10mA V =2V 155 330 505 FE C CE T =25 C j C collector-base V =2V f=1MHz - 175 - fF CBS CB capacitance f transition frequency I =50mA V =1V -45 - GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =50mA V =1V -22 - dB p(max) C CE f= 2.4GHz T =25 C amb NF noise figure I =12mA V =2V -0.50 - dB C CE f= 2.4GHz = S opt IP3 third-order intercept I =30mA V =2.5 V -32 - dBm C CE point Z =Z =50 S L f= 2.4GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU760F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads BFU760F All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 29 April 2011 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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