X-On Electronics has gained recognition as a prominent supplier of MAX2601ESA+ RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. MAX2601ESA+ RF Bipolar Transistors are a product manufactured by Analog Devices. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

MAX2601ESA+ Analog Devices

MAX2601ESA+ electronic component of Analog Devices
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Part No.MAX2601ESA+
Manufacturer: Analog Devices
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors 3.6V, 1W RF Power Transistors for 900MHz Applications
Datasheet: MAX2601ESA+ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.2194 ea
Line Total: USD 9.22 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 9.2194
10 : USD 8.1409
25 : USD 7.4038
100 : USD 6.4024
300 : USD 5.8747
500 : USD 5.3393

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 8
Multiples : 8
8 : USD 3.9908
20 : USD 3.843
75 : USD 3.843
200 : USD 3.6952
750 : USD 3.6952

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 8.9629
10 : USD 7.7616
50 : USD 7.3332
100 : USD 6.1061
500 : USD 5.1975
1000 : USD 4.2768
2500 : USD 4.1314

   
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We are delighted to provide the MAX2601ESA+ from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MAX2601ESA+ and other electronic components in the RF Bipolar Transistors category and beyond.

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MAX2601/MAX2602 19-1185 Rev 3 9/08 3.6V, 1W RF Power Transistors for 900MHz Applications General Description Features The MAX2601/MAX2602 are RF power transistors opti- Low Voltage: Operates from 1 Li-Ion or mized for use in portable cellular and wireless equipment 3 NiCd/NiMH Batteries that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a DC-to-Microwave Operating Range 3.6V supply with efficiency of 58% when biased for con- stant-envelope applications (e.g., FM or FSK). For NADC 1W Output Power at 900MHz (IS-54) operation, they deliver 29dBm with -28dBc ACPR On-Chip Diode for Accurate Biasing (MAX2602) from a 4.8V supply. The MAX2601 is a high-performance silicon bipolar RF Low-Cost Silicon Bipolar Technology power transistor. The MAX2602 includes a high- Does Not Require Negative Bias or Supply Switch performance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process High Efficiency: 58% characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistors collector current as the tempera- ture changes. The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier. Silicon bipolar Ordering Information technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET PART TEMP RANGE PIN-PACKAGE power amplifiers. Furthermore, a drain switch is not MAX2601ESA -40C to +85C 8 SOIC required to turn off the MAX2601/MAX2602. This MAX2602ESA -40C to +85C 8 SOIC increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device. The MAX2601/MAX2602 are available in thermally enhanced, 8-pin SO packages, which are screened to the extended temperature range (-40C to +85C). Applications Pin Configurations Narrow-Band PCS (NPCS) TOP VIEW 915MHz ISM Transmitters Microcellular GSM (Power Class 5) C 1 8 C C 1 8 C AMPS Cellular Phones E 2 7 E E 2 7 E Digital Cellular Phones E 3 6 E BIAS 3 6 E Two-Way Paging B B 4 5 B 4 5 B CDPD Modems MAX2601 MAX2602 PSOPII PSOPII Land Mobile Radios Typical Application Circuit appears at end of data sheet. Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxims website at www.maxim-ic.com. EVALUATION KIT AVAILABLE3.6V, 1W RF Power Transistors for 900MHz Applications ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage, Shorted Base (V )....................17V Operating Temperature Range ...........................-40C to +85C CES Emitter Base Reverse Voltage (V )...................................2.3V Storage Temperature Range .............................-65C to +165C EBO BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V Junction Temperature......................................................+150C Average Collector Current (I )........................................1200mA Lead Temperature (soldering, 10s) .................................+300C C Continuous Power Dissipation (T = +70C) A SOIC (derate 80mW/C above +70C) (Note 1) .............6.4W Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section). Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS (T = T to T , unless otherwise noted.) A MIN MAX PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS BV Open base 15 Collector-Emitter Breakdown CEO I < 100A V C Voltage BV Shorted base 15 CES Collector-Emitter Sustaining LV I = 200mA 5.0 V CEO C Voltage Collector-Base Breakdown BV I < 100A, emitter open 15 V CBO C Voltage DC Current Gain h I = 250mA, V = 3V 100 FE C CE Collector Cutoff Current I V = 6V, V = 0V 0.05 1.5 A CES CE BE Output Capacitance C V = 3V, I = 0mA, f = 1MHz 9.6 pF OB CB E AC ELECTRICAL CHARACTERISTICS (Test Circuit of Figure 1, V = 3.6V, V = 0.750V, Z = Z = 50, P = 30dBm, f = 836MHz, T = +25C, unless oth- CC BB LOAD SOURCE OUT A erwise noted.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Frequency Range f (Note 2) DC 1 GHz Base Current I 4.2 mA B V = 3.6V, P = 30dBm -43 dBc CC OUT Harmonics 2fo, 3fo dBc V = 3.0V, P = 29dBm -42 CC OUT Power Gain P = 30dBm 11.6 dB OUT Collector Efficiency No modulation 58 % Stability under Continuous V V = 5.5V, all angles (Note 3) 8:1 SWR CC Load Mismatch Conditions IM3 -16 P = +30dBm total power, f1 = 835MHz, OUT Two-Tone IMR dBc f2 = 836MHz IM5 -25 Noise Figure NF V = 0.9V 3.3 dB BB Note 2: Guaranteed by design. Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc b) no parametric degradation is observable when mismatch is removed and c) no current draw in excess of the package dissipation capability is observed. 2 MAX2601/MAX2602

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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