X-On Electronics has gained recognition as a prominent supplier of 1015MP RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. 1015MP RF Bipolar Transistors are a product manufactured by Microchip. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

1015MP Microchip

1015MP electronic component of Microchip
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See Product Specifications
Part No.1015MP
Manufacturer: Microchip
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors Avionics/Bipolar Transistor
Datasheet: 1015MP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the 1015MP from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1015MP and other electronic components in the RF Bipolar Transistors category and beyond.

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1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed 55FW systems up to 1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS o 2 Maximum Power Dissipation 25 C 50 Watts Pk Maximum Voltage and Current BVces Collector to Emitter Voltage 65 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 1.0 Amps Pk Maximum Temperatures o Storage Temperature - 65 to + 150 C o Operating Junction Temperature + 200 C ELECTRICAL CHARACTERISTICS 25 C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS P Power Out F= 1150 MHz 15 W OUT P Power Input Vcc = 50 Volts 1.5 W IN P Power Gain 10 11 dB PW = 10 sec, DF = 1% G Efficiency 40 % c VSWR Load Mismatch Tolerance F = 1150 MHz 10:1 FUNCTIONAL CHARACTERISTICS 25 C BVebo Emitter to Base Breakdown Ie = 5 mA 3.5 V BVces Collector to Emitter Breakdown Ic = 15mA 65 V Hfe DC Current Gain Vce = 5V, Ic = 100 mA 20 Cob Output Capacitance Vcb = 50 V, f = 1 MHz 5.0 7.5 pF 1 o jc Thermal Resistance 3.5 C/W Note 1: At rated output power and pulse conditions Rev A: Updated June 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1015MP CASE DRAWING: Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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