1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed 55FW systems up to 1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS o 2 Maximum Power Dissipation 25 C 50 Watts Pk Maximum Voltage and Current BVces Collector to Emitter Voltage 65 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 1.0 Amps Pk Maximum Temperatures o Storage Temperature - 65 to + 150 C o Operating Junction Temperature + 200 C ELECTRICAL CHARACTERISTICS 25 C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS P Power Out F= 1150 MHz 15 W OUT P Power Input Vcc = 50 Volts 1.5 W IN P Power Gain 10 11 dB PW = 10 sec, DF = 1% G Efficiency 40 % c VSWR Load Mismatch Tolerance F = 1150 MHz 10:1 FUNCTIONAL CHARACTERISTICS 25 C BVebo Emitter to Base Breakdown Ie = 5 mA 3.5 V BVces Collector to Emitter Breakdown Ic = 15mA 65 V Hfe DC Current Gain Vce = 5V, Ic = 100 mA 20 Cob Output Capacitance Vcb = 50 V, f = 1 MHz 5.0 7.5 pF 1 o jc Thermal Resistance 3.5 C/W Note 1: At rated output power and pulse conditions Rev A: Updated June 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1015MP CASE DRAWING: Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.