1214-110M Microchip

1214-110M 110 Watts - 50 Volts, 330 s, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1214-110M is an internally matched, COMMON BASE transistor capable 55KT, STYLE 1 of providing 110 Watts of pulsed RF output power at 330 s pulse width, 10% duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS o Maximum Power Dissipation @ 25 C 270 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage 75 Volts BVebo Emitter to Base Voltage 3.0 Volts Ic Collector Current 8 Amps Maximum Temperatures o Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C O ELECTRICAL CHARACTERISTICS @ 25 C CHARACTERISTICS MIN TYP MAX UNITS SYMBOL TEST CONDITIONS Pout Power Out Freq = 1200 1400 MHz 110 170 Watts Pg Power Gain 7.4 dB Vcc = 50 Volts c Collector Efficiency 50 55 % Pin = 20 Watts Input Return loss dB Rl 10 Pulse Width = 330 s Droop Droop 0.5 dB Flatness Duty Factor = 10% Flatness 1.25 dB 1 VSWR Load Mismatch Tolerance 3:1 VSWRs Load Mismatch - Stability 1.5:1 FUNCTIONAL CHARACTERISTICS @ 25C Bvces Collector to Emitter Breakdown Ic = 100 mA 75 Volts Ices Collector to Emitter Leakage Vce = 50 Volts 10 mA o 1 Thermal Resistance Rated Pulse Condition 0.65 C/W jc MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 1214-110M Performance Curves 1214-110M 1214-110M Pin vs. Pout Pin vs. Efficency 200 70.0 180 60.0 160 50.0 140 120 1200 MHz 40.0 1200 MHz 100 1300 MHz 1300 MHz 1400 Mhz 1400 MHz 30.0 80 60 20.0 40 10.0 20 0 0.0 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 Pin (W) Pin (W) 1214-110M Pin vs. Gain 12.0 10.0 8.0 1200 MHz 1300 MHz 6.0 1400 MHz 4.0 2.0 0.0 0 5 10 15 20 25 30 35 Pin (W) Impedance Information 2 Frequencies (MHz) Z ( ) )Z ( Source Load 1200 3.36-j3.12 4.97+j0.15 1300 3.5-j2.4 5.33-j2.86 1400 3.81-j1.3 2.88-j3.86 Note 2: Z exclusive of bias circuit Load MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 Pout (W) Gain (dB) Efficency (%)