X-On Electronics has gained recognition as a prominent supplier of 1214-220M RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. 1214-220M RF Bipolar Transistors are a product manufactured by Microchip. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

1214-220M Microchip

1214-220M electronic component of Microchip
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Part No.1214-220M
Manufacturer: Microchip
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors L-Band/Bipolar Radar Transistor
Datasheet: 1214-220M Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 623.1034 ea
Line Total: USD 623.1 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 600.0255
10 : USD 597.0094
25 : USD 583.7309

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 623.1034

   
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We are delighted to provide the 1214-220M from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1214-220M and other electronic components in the RF Bipolar Transistors category and beyond.

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1214-220M, R2 1214 220M 220 Watts - 40 Volts, 150s, 10% Radar 1200 - 1400 MHz Final Proof GENERAL DESCRIPTION CASE OUTLINE The 1214-220M is an internally matched, COMMON BASE transistor capable 55ST, STYLE 1 of providing 220 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS o Maximum Power Dissipation 25 C 700 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage 70 Volts Iebo Emitter to Base Voltage 5 mA Ic Collector Current 20 Amps Maximum Temperatures o Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C O ELECTRICAL CHARACTERISTICS 25 C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Vcc=40V, Pin=40W, f = 1.2, 1.3, 1.4 GHz Pout Power Out ( Note 1) 220 290 Watts Vcc=40V, Pin=40W, f = 1.2, 1.3, 1.4 GHz Pg Power Gain 7.4 dB Vcc=40V, Pin=40W, f = 1.2, 1.3, 1.4 GHz Collector Efficiency 45 50 % hc Vcc=40V, Pin=40W, f = 1.2, 1.3, 1.4 GHz Input Return loss dB Rl 9 Vcc=40V, Pin=40W, f = 1.2 GHz 1 Load Mismatch Tolerance 3:1 VSWR Vcc=40V, Pin=40W, f = 1.2 GHz Load Mismatch - Stability 2:1 VSWRs Note 1: Pulse condition of 150sec, 10%. BVces Collector to Emitter Breakdown Ic = 100 mA 70 Volts Ices Collector to Emitter Leakage Vce = 40 Volts 10 mA Iebo Emitter to Base Breakdown Veb = 3 Volts 5 mA Hfe DC Current Gain Vce = 5 V, Ic = 1 A 10 45 o 1 Thermal Resistance Rated Pulse Condition 0.25 C/W qjc ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT. Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 1214-220M, R2 Issue March 2005 1214 220M Performance Curves Pin vs. Pout Pin vs. Gain 56 10 9 54 8 52 7 1.2 GHz 6 1.2 GHz 50 1.3 GHz 5 1.3 GHz 48 1.4 GHz 1.4 GHz 4 46 3 2 44 1 42 0 38 40 42 44 46 48 50 38 40 42 44 46 48 50 Pin (dBm) Pin (dBm) Pin vs. Efficiency 70.00 60.00 50.00 1.2 GHz 40.00 1.3 GHz 30.00 1.4 GHz 20.00 10.00 0.00 38 40 42 44 46 48 50 Pin (dBm) Input Output Matching Matching Circuit Circuit 50 Ohms 50 Ohms Z Z Source Load Impedance Information Frequencies (MHz) Z () Z () Source Load 1200 3.6 j0.93 2.96 j1.86 1300 2.7 j1.27 2.25 j2.03 1400 1.86 j0.83 1.51 j1.66 ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT. Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 Pout (dBm) Efficiency (%) Gain (dB)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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